Inlustra Technologies, LLC

5385 Hollister Ave., #113
Santa Barbara, CA 93111
http://www.ucsb.edu
6 Employees

SBIR Award Summary

Total Number of Awards 6
Total Value of Awards $1.62MM
First Award Date 01/01/06
Most Recent Award Date 01/01/11

Key Personnel

Last Name Name Awards Contact
Fini Paul T. Fini 6 Message
Haskell Benjamin A. Haskell 3 Message

6 Awards Won

Phase 2 SBIR

Agency: National Science Foundation
Topic: 2011
Budget: 01/01/11 - 12/31/11

This Small Business Innovation Research (SBIR) Phase II project aims to grow gallium nitride (GaN) single crystals that are large enough to yield commercially-viable non-polar GaN substrates for optoelectronic devices. The feasibility of the crystal growth processes was demonstrated in Phase I. This Phase II project will focus on the reproducibi...

Phase 1 STTR

Institution: University of Notre Dame

Agency: Missile Defense Agency
Topic: MDA09-T001
Budget: 05/03/10 - 11/02/10

Inlustra Technologies and the University of Notre Dame propose a Phase I STTR program that, combined with a subsequent Phase II effort, will result in methods for the scalable production of semi-insulating non-polar GaN substrates. These substrates will be utilized in the fabrication of high-power/high-frequency AlGaN-GaN electronic devices cap...

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2009
Budget: 01/01/09 - 12/31/09

This Small Business Innovation Research Phase I project will demonstrate the feasibility of economical and scalable GaN bulk crystal growth techniques to produce non-polar and semi-polar GaN substrates with a uniformly low dislocation density. The non-polar and semi-polar GaN substrates will be derived from a novel multi-step crystal growth proc...

Phase 2 STTR

Institution: University of California, Santa Barbara

Agency: Army
Topic: A06-T019
Budget: 08/29/08 - 11/26/09

Inlustra Technologies and the University of California, Santa Barbara propose a Phase II STTR project to grow and characterize single-crystal boules of gallium nitride (GaN) along non-polar directions. These boules will have sufficient size to yield multiple two-inch (50.8 mm) diameter non-polar GaN substrates with n-type conductivity. During ...

Phase 1 STTR

Institution: University of California, Santa Barbara

Agency: Army
Topic: A06-T019
Budget: 08/08/06 - 02/03/07

Inlustra Technologies and the University of California, Santa Barbara propose to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent GaN boule growth. In this Phase I STTR effort, Inlustra will first develop non-polar and semi-polar GaN films with smooth surfaces and minimal wa...

Phase 1 STTR

Institution: University of California, Santa Barbara

Agency: National Science Foundation
Topic: 2006
Budget: 01/01/06 - 12/31/06

This Small Business Technology Transfer (STTR) Phase I project will develop nonpolar gallium nitride (GaN)-based light emitting diodes (LEDs) with high energy efficiency and output power. Nonpolar GaN-based LEDs will find immediate application in demanding next-generation solid-state lighting applications. Recently there has been significant imp...