Nitronex Corp.

2305 Presidential Drive
Durham, NC 27703
http://www.nitronex.com
60 Employees

SBIR Award Summary

Total Number of Awards 18
Total Value of Awards $4.98MM
First Award Date 10/28/99
Most Recent Award Date 01/19/11

Key Personnel

Last Name Name Awards Contact
Piner Dr. Edwin Piner 7 Message
Linthicum Dr. Kevin Linthicum 4 Message
Johnson Dr. Mark Johnson 3 Message
Weeks Warren Weeks 1 Message
Nagy Mr. Walter Nagy 1 Message
Park Dr. Chris Park 1
Rajagopal Mr. Pradeep Rajagopal 3
Winslow Thomas A. Winslow 1
Victor Alan Victor 1 Message

18 Awards Won

Phase 1 SBIR

Agency: Air Force
Topic: AF103-178
Budget: 01/19/11 - 10/19/11

Nitronex Corporation has identified unique innovations in Gallium Nitride (GaN) high electron mobility transistors (HEMT) for realizing advancements in X and Ka-Band low noise amplifiers (LNAs). These advancements are based on existing GaN on silicon (Si), radio frequency (RF) power amplifier (PA) device techniques and when applied to LNAs, imp...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA07-034
Budget: 08/14/09 - 08/14/11

The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro

Phase 1 SBIR

Agency: Navy
Topic: N08-172
Budget: 09/29/08 - 04/08/09

S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed in this SBIR Phase I proposal is to combine the ...

Phase 1 SBIR

Agency: Navy
Topic: N08-170
Budget: 09/15/08 - 12/04/09

GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technologies. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. Discrete devices and MMICs based on GaN on Si are ide...

Phase 2 SBIR

Agency: Navy
Topic: N06-125
Budget: 05/19/08 - 05/19/10

GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to develop a reliable 300W GaN packaged device th...

Phase 2 SBIR

Agency: Navy
Topic: N06-119
Budget: 05/14/08 - 05/14/10

The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by developing high frequency capable GaN FETs to support th...

Phase 2 STTR

Institution: University of Florida

Agency: Missile Defense Agency
Topic: MDA06-T012
Budget: 03/11/08 - 03/10/10

AlGaN/GaN FETs on Si will be developed and optimized for operation at high frequency (X-band and above). The high frequency performance will be improved by modifications to the existing commercialized sub-4GHz GaN FET platform technology that s currently available at Nitronex. The modifications will be made in the epitaxial structure, device l...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA07-034
Budget: 02/13/08 - 08/13/08

GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. MMICs based GaN on Si are ideally suited for applications ...

Phase 1 SBIR

Agency: Navy
Topic: N07-155
Budget: 10/02/07 - 06/02/08

GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex has commercialized AlGaN/GaN HEMTs on silicon substrates. As such, reliable devices and accurate device models are available for sub-4GHz operation...

Phase 1 SBIR

Agency: Navy
Topic: N06-125
Budget: 11/08/06 - 02/15/08

Utilizing Nitronex s solid state GaN FETs and SAIC s design expertise in PAs, a small, lightweight power amplifier can be achieved. Specifically, in this phase I effort, Nitronex will advance GaN technology and design high power (>250W) devices with very low thermal resistance in order to provide building blocks required for the PA. Nitronex w...

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