Lawrence Semiconductor Research Labs

2300 Hungington Drive
Tempe, AZ 85282
26 Employees

SBIR Award Summary

Total Number of Awards 5
Total Value of Awards $687K
First Award Date 08/01/93
Most Recent Award Date 05/26/99

Key Personnel

Last Name Name Awards Contact
Robinson McDonald Robinson 2
Westhoff Richard Westhoff 1
Robinson Mcdonald Robinson 1
Boisvert Joseph C Boisvert 1

5 Awards Won

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO99-014
Budget: 05/26/99 - 11/25/99

We propose carbon-doped polycrystalline silicon or silicon-germanium (SiGe) gate contacts for metal-oxide semiconductor field effect transistors (MOSFETs). Polycrystalline SiGe is a promising alternative for gate contacts in MOSFETs, with useful properties including the ability to manipulate work function of the contact, enhanced dopant activati...

Phase 1 SBIR

Agency: Department of Health & Human Services
Budget: 07/20/98 - 01/19/99

Positron Emission Tomography (PET) has developed into an important research and clinical diagnostic tool providing non-invasive, in-vivo functional medical images. An important figure-of-merit for these systems is the spatial resolution of the images. In addition, although spatial resolution is an import...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: SDIO93-014
Budget: 03/25/96 - 03/25/98

Silicon-germanium-carbon alloys represent a new class of group IV semiconductors. In the Phase I SBIR research we demonstrated the heteroepitaxial growth of silicon-germanium-carbon onto silicon by chemical vapor deposition, with up to 5% carbon incorporated into the layers. This far exceeds the solubility limit of carbon in silicon and is a sub...

Phase 1 STTR

Institution: MIT Lincoln Labs

Agency: Missile Defense Agency
Topic: BMDO94T002
Budget: 09/22/94 - 12/31/94

A state-of-the-art, low-pressure, high purity epitaxial reactor will be used to develop process to deposit thick, high resistivity epitaxial silicon on high quality Czochralski (CZ) substrates. This material should remain free of slip dislocations because of the greater resistance of CZ silicon to nucleation and propagation of dislocations. Usin...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: SDIO93-014
Budget: 08/01/93 - 02/01/94