United Silicon Carbide, Inc.

7 Deer Park Drive Suite E
Monmouth Junction, NJ 08852
http://www.unitedsic.com
18 Employees

SBIR Award Summary

Total Number of Awards 55
Total Value of Awards $20.4MM
Active Awards 1 valued at $1.01MM
First Award Date 12/18/98
Most Recent Award Date 07/31/17

55 Awards Won

Phase 2 SBIR Active

Agency: Department of Energy
Topic: 14b
Budget: 07/31/17 - 07/30/19

Advanced power electronics are needed to realize cost and weight reductions which will make electric vehicles as affordable as gasoline powered vehicles. In this program, SiC switches are being developed as they are the key component to enable the electronics needed to meet this need. In 2016, over 700,000 plug-in electric vehicles were sold, wh...

Phase 2 SBIR

Agency: Department of Energy
Topic: 17b
Budget: 08/01/16 - 07/31/18

The U.S. represents the world’s leading market for electric vehicles and is producing some of the most advanced plugin electric vehicles (PEV’s) available today. PEV’s are gaining widespread adoption every year, where 58% of all PEV sales occurred in 2013 and it is expected that by 2023, there will be ~3.2 million PEV’s on the road in the U.S. a...

Phase 1 SBIR

Agency: Navy
Topic: N161-066
Budget: 07/11/16 - 05/10/17

Over the last decade, tremendous efforts have been invested in developing high voltage SiC power switches. At present, SiC unipolar power switches including MOSFETs and normally-on JFETs have been commercially available at voltage ratings up to 1700V. However, medium voltage (>3300V) SiC power devices are still not commercially available mainly ...

Phase 1 SBIR

Agency: Department of Energy
Topic: 14
Budget: 06/13/16 - 12/12/16

In 2014, approximately ~120,000 plug-in electric vehicles (PEV’s) were sold in the US alone, representing a 23% increase from 2013 and a 128% increase from 2012 and nearly 1/3 of the PEV’s sold worldwide, making the US the largest market for PEV and HEV adoption. It is expected that by 2023, there will be ~3.2 million PEV’s on the road in the U....

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: S4.04
Budget: 05/06/16 - 05/05/18

Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long duration Europa-Jupiter missions will expose electronics to temperatures up to 500 �C and radiation of 3 Mrad (Si) total dose. During this program, United Silicon Carbide will extend th...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: S4.04
Budget: 06/17/15 - 12/17/15

Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long duration Europa-Jupiter missions will expose electronics to temperatures up to 500 Deg.C and radiation of 3 Mrad (Si) total dose. During this program, United Silicon Carbide will extend...

Phase 1 SBIR

Agency: Department of Energy
Topic: 17b
Budget: 06/08/15 - 03/07/16

The U.S. represents the worlds leading market for electric vehicles and is producing some of the most advanced plug-in electric vehicles PEVs) available today. PEVs are gaining widespread adoption every year, where 58% of all PEV sales occurred in 2013 and it is expected that by 2023, there will be ~3.2 million PEVs on the road in the U.S. alone...

Phase 2 SBIR

Agency: Air Force
Topic: AF131-166
Budget: 09/09/14 - 11/30/16

ABSTRACT: During this program, United Silicon Carbide (USCi), Inc. will develop basic analog and digital integrated circuit blocks capable of operation up to 350 oC, based on silicon carbide (SiC) complementary lateral Junction Field Effect Transistor (JFET) technology. In order to reduce the complexity of the fabrication process and to ensure b...

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: 12-2-S1.04
Budget: 01/01/14 - 12/31/14

Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a monolithic, solar-blind UV image sensor with 320 x 256 pixels on a 25 micron pitch with a frame rate of 50 frames per second and pixel fill factor over 80%. A silicon carbide (SiC) int...

Phase 1 SBIR

Agency: Air Force
Topic: AF131-166
Budget: 06/03/13 - 03/01/14

ABSTRACT: During this program, United Silicon Carbide, Inc. (USCi) will develop basic analog and digital circuit blocks capable of operation up to 500oC, based on 4H-SiC complementary lateral JFET technology. The following integrated circuits will be designed (i) operational amplifier; (ii) voltage reference circuit; and (iii) logic gates with t...

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