APA Optics, Inc.

2950 Ne 84th Lane
Blaine, MN 55449
48 Employees

SBIR Award Summary

Total Number of Awards 60
Total Value of Awards $10.4MM
First Award Date 01/01/85
Most Recent Award Date 08/31/96

Key Personnel

Last Name Name Awards Contact
Boord Dr. W T Boord 7
Jain Dr. Anil K Jain 6
Khan M. Khan 19
Boord W. T. Boord 4
Khan Dr. M Asif Khan 15
Arnold Dr. Steven M Arnold 2
Vanhove Dr. Jim M. Vanhove 1
M. Van Hove Dr. Jim M. Van Hove 1
Kuznia Jonathan Kuznia 1
Yang Dr. Jinwei Yang 1
Hutcheson Dr. Lynn D Hutcheson 1
Stoltzmann David E Stoltzmann 2
Phillips William Phillips 1
Hove Dr. Jim Van Hove 1

60 Awards Won

Phase 2 SBIR

Agency: Air Force
Topic: AF95-135
Budget: 08/31/96 - 12/01/98
PI: M. Khan

We propose a 2 year phase II program aimed at developing a solid state UV imaging device. The device is based on a CCD or a Opto FET implementation using GaN-AlGaN heterojunctions.

Phase 1 SBIR

Agency: Office of the Secretary of Defense
Topic: OSD95-014
Budget: 08/15/95 - 02/15/96

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO95-014
Budget: 06/21/95 - 12/21/95
PI: M. Khan

Phase 1 SBIR

Agency: Air Force
Topic: AF95-135
Budget: 05/05/95 - 11/05/95
PI: M. Khan

Phase 2 SBIR

Agency: Air Force
Topic: AF93-121
Budget: 09/29/94 - 12/26/96
PI: M. Khan

APA proposed a two year Phase II SBIR program aimed at developing GaN/AlGaN based integrated optics components for commercial and DOD applications. For this program we have selected to fabricate and package a 1xN directional coupler switch for IR (0.8 and 1.3 microns) and visible wavelengths (632.8 nm) operation. The AlGaN material system with...

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: DARPA93-007
Budget: 09/01/94 - 02/28/95
PI: M. Khan

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB941-065
Budget: 08/10/94 - 03/15/95
PI: M. Khan

We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high temperature (>>2000oC) furnace with a temperature gradient between the A1N charge and the deposition (seed) regions. Our approach is based ...

Phase 2 SBIR

Agency: Navy
Topic: N93-003
Budget: 06/01/94 - 10/30/96

The objective of our Phase II program is to demonstrate a prototype wavelength division multiplexed (WDM) optical modulator for future commercialization. To accomplish this pbjective, we are proposing an "initial Phase II" portion and an "optional Phase II" portion. The initial Phase II portion will focus on the fabrication of two complete WDM ...

Phase 1 SBIR

Agency: Navy
Topic: N93-003
Budget: 09/22/93 - 03/22/94

Phase 2 SBIR

Agency: Air Force
Topic: AF92-018
Budget: 08/17/93 - 08/17/95
PI: M. Khan

The goal of our program is to develop a high temperature MISFET device for integration with high temperature sensors for DOD applications. The key to our technical approach is a BN-ALx-GA1-xN heterojunction. The technology to deposit the insulating BN layer and BN-AIN-GaN heterostructures was developed under the Phase I effort. In the past w...

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