Epitaxx, Inc.

3490 U.S. RTE 1
Princeton, NJ 08540
30 Employees

SBIR Award Summary

Total Number of Awards 8
Total Value of Awards $1.38MM
First Award Date 01/01/87
Most Recent Award Date 01/01/90

Key Personnel

Last Name Name Awards Contact
Olsen Dr. Gregory H Olsen 3
Gasparian George A Gasparian 2
Ban Dr. Vladimir S Ban 2
Ban Dr. V S Ban 1

8 Awards Won

Phase 2 SBIR

Agency: Army
Topic: A88-054
Budget: 01/01/90 - 12/31/90

EPITAXX PROPOSES TO DEVELOP A LARGE-AREA AVALANCHE PHOTODIODE (APD) WITH GAINS OVER TEN AND NOISE CURRENT BELOW 1 pA/(Hz)1/2 FOR THE 1.93 um SPECTRAL REGION. A UNIQUE FLOATING GUARD-RING (APD) STRUCTURE WILL BE APPLIED TO THE PHASE I DEVELOPED InGaAs/InAsP MATERIALS SYSTEM TO PRODUCE AN INNOVATIVE HIGH-GAIN DETECTOR FOR FOLIAGE MONITORING, LIDA...

Phase 1 SBIR

Agency: Army
Topic: A89-045
Budget: 09/28/89 - 12/31/89

Phase 2 SBIR

Agency: Army
Topic: A88-096
Budget: 09/01/89 - 01/24/92

EPITAXX PROPOSES TO DEVELOP A UNIQUE MERGED HYDRIDE VAPOR PHASE EPITAXY (VPE)/METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH METHOD TO FABRICATE THIN (~10A) LAYERS OF InGaAsP ALLOYS WITH ABRUPT INTERFACES FOR QUANTUM WELL (QW), STRAINED LAYER AND SUPERLATTICE SEMICONDUCTOR DEVICES. WE ENVISION A COOPERATIVE EFFORT WITH FT. MONMOUTH WHERE...

Phase 2 SBIR

Agency: Air Force
Topic: AF88-055
Budget: 01/01/89 - 12/31/89

IN PHASE I WE DEVELOPED A NOVEL, SIMPLIEID, VAPOR PHASE EPITAXIAL (VPE) TECHNOLOGY, BASED ON In/Ga ALLOYS AS SOURCE METALS. LATTICEMATCHED In(0.53)Ga(0.47)As EPITAXIAL LAYERS WERE GROWN TO PRODUCE STATE-OF-THE-ART PIN PHOTODETECTORS FOR FIBER OPTIC APPLICATIONS. A 75 UM ACTIVE AREA DEVICE HAD A DARK CURRENT (-5V) OF 10-20 nA, A CAPACITANCE OF 0...

Phase 1 SBIR

Agency: Air Force
Topic: AF88-055
Budget: 07/28/88 - 12/31/88

Phase 1 SBIR

Agency: Army
Topic: A88-096
Budget: 01/01/88 - 12/31/88

Phase 1 SBIR

Agency: Army
Topic: A88-054
Budget: 01/01/88 - 12/31/88

Phase 1 SBIR

Agency: Air Force
Topic: AF87-091
Budget: 01/01/87 - 12/31/87