Genesic Semiconductor, Inc.

43670 Trade Center Place Suite 155
Dulles, VA 20166
http://www.genesicsemi.com
12 Employees

SBIR Award Summary

Total Number of Awards 27
Total Value of Awards $9.32MM
First Award Date 01/01/06
Most Recent Award Date 06/12/17

Key Personnel

Last Name Name Awards Contact
Singh Dr. Ranbir Singh 29 Message
Sundaresan Siddarth Sundaresan 10 Message
Lulla Satish Lulla 1 Message
Sundaresan Siddarth Sundaresan 1 Message

27 Awards Won

Phase 1 SBIR

Agency: Department of Energy
Topic: 14b
Budget: 06/12/17 - 03/11/18

Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current Silicon Carbide high-speed switches and rectifiers, since the existing Silicon technology is severely limited in terms of operating temperature, frequency and energy efficiency. Howeve...

Phase 2 SBIR

Agency: Department of Energy
Topic: 10a
Budget: 08/01/16 - 07/31/18

This project will create a new category of advanced all Silicon Carbide power inverters for use in energy storage in the medium voltage range and > 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in thermal management requirements over the existing Silic...

Phase 2 SBIR

Agency: Department of Energy
Topic: 17b
Budget: 08/01/16 - 07/31/18

Reducing the size, weight, and increasing the efficiency of automotive traction power inverters requires the development of novel high voltage, high current silicon carbide high speed rectifiers, since the existing silicon technology is severely limited in terms of operating temperature, frequency and energy efficiency. However, the non-optimize...

Phase 1 SBIR

Agency: Navy
Topic: N161-066
Budget: 07/11/16 - 05/10/17

This two-phase SBIR program will develop fully-qualified 6500 V/100 A SiC MOSFET based dual-half bridge power modules, targeted for insertion into the next-generation of U.S. NAVY all-electric warships. The proposed SiC MOSFETs will feature breakdown voltages > 6500 V, specific on-resistance < 35 m-cm2, threshold voltage > 2 V, 175C operation, a...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: S3.03
Budget: 06/10/16 - 12/09/16

This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing analog and digital circuits that can be fully integrated with 4H-SiC power switching devices, enabling eventual realization of a monolithic, highly integrated gate driver circuit. Specifically, the final goal of this program is to devel...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: S3.03
Budget: 06/17/15 - 12/17/15

The proposed SBIR program targets the development of Rad-Hard by Design (RHBD), 1200 V-class SiC (planar) vertical DMOSFETs and power Schottky rectifiers for future NASA space missions. Single die ratings of > 1200 V, > 75 A, > 225�C and compliance to a NASA-certified radiation hardness assurance program are targeted for the proposed SiC power d...

Phase 1 SBIR

Agency: Department of Energy
Topic: 10a
Budget: 06/08/15 - 03/07/16

This project will create a new category of advanced all-Silicon Carbide power inverters for use in energy storage in the medium-voltage range and &gt; 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in thermal management requirements over the existing Si...

Phase 1 SBIR

Agency: Department of Energy
Topic: 17b
Budget: 06/08/15 - 03/07/16

Reducing the size, weight, and increasing the efficiency of electric vehicle traction power inverters requires the development of novel high-voltage, high current silicon carbide high-speed rectifiers, since the existing silicon technology is severely limited in terms of operating temperature, frequency and energy efficiency. However, the non-op...

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: 12-2-E1.01
Budget: 01/01/14 - 12/31/14

Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor propose a SBIR program focused on the development of 15 kW/300C-rated power converters using AlGaN/GaN-Si MOS-HFETs and Schottky rectifiers. The proposed AlGaN/GaN-Si power converters to...

Phase 1 STTR

Institution: Cornell University

Agency: Department of Energy
Topic: 11C-2013
Budget: 01/01/13 - 12/31/13

DoEs recent emphasis on increasing fuel economy requires electrification of the vehicle powertrain, thus leading to extended range electric vehicles (EREVs), hybrid electric vehicles (HEVs), battery electric vehicles (BEV) and fuel cell electric vehicles (FCEV). All electric propulsion systems require high current, high-voltage (600 V-1200 V), l...

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