Discovery Semiconductors, Inc.

Nj
Ewing, NJ 08628
http://www.chipsat.com
25 Employees

SBIR Award Summary

Total Number of Awards 20
Total Value of Awards $6.06MM
First Award Date 01/01/94
Most Recent Award Date 05/08/14

Key Personnel

Last Name Name Awards Contact
Joshi Mr. Abhay Joshi 17 Message
Datta Shubhashish Datta 2 Message
Datta Shubo Datta 2 Message
Data Shubo Data 0 Message

20 Awards Won

Phase 1 SBIR

Agency: Navy
Topic: N141-013
Budget: 05/08/14 - 11/10/14

We will manufacture high current handling balanced photodiodes in a rugged 8-pin Kovar package having the following characteristics: (a) Small Package with height of 5 mm, and volume of 2.5 cubic cm; (b) Use 7 micron core, loose tube, SM fiber for tight bend radius; (c) Responsivity > 0.7 A/W at 1310 and 1550 nm; (d) 20 GHz bandwidth with t...

Phase 1 SBIR

Agency: Air Force
Topic: AF131-142
Budget: 08/07/13 - 05/07/14

ABSTRACT: Discovery Semiconductors will assemble high power InGaAs/InP photodiodes with 50 ohm internal termination in a fiber-pigtailed, W1-connectorized microwave package having the following specifications: (a) Responsivity > 0.7 A/W at 1550 nm wavelength; (b) -3 dB Bandwidth > 60 GHz; (c) -9 dB Bandwidth > 80 GHz; (d) 1 dB Compression Photo...

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: 09-2-S1.05
Budget: 01/01/11 - 12/31/11

Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level integration for hyper-spectral imaging. Also, the si...

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB101-008
Budget: 06/01/10 - 04/15/11

We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: 10-2-S1
Budget: 01/01/10 - 12/31/10

We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage 850 to 1700 nm, with responsivity of 0.7 A/W at 1064 nm; (c) Bandwidth up to 20 MHz for the individual quadrant; (d) Group Delay

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 10-1-S1
Budget: 01/01/10 - 12/31/10

Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level integration for hyper-spectral imaging. Also, the si...

Phase 1 SBIR

Agency: Army
Topic: A09-056
Budget: 10/16/09 - 04/16/10

We propose to demonstrate a photonic radio-frequency (RF) arbitrary waveform generator (AWG) having (1) 3 dB bandwidth = 10 GHz, (2) time aperture > 2 ns (time-bandwidth product > 20), and (3) maximum RF output amplitude > 3 V. This performance will be facilitated by our proposed highly linear, high-power 10 GHz bandwidth photodiodes which will...

Phase 2 SBIR

Agency: National Institute of Standards and Technology
Topic: 2009
Budget: 01/01/09 - 12/31/09
PI: Unavailable

Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode¿s non-linearity, specifically power-to-phase conversion. Du...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 09-1
Budget: 01/01/09 - 12/31/09

Gravity wave detection using space-based long-baseline laser interferometric sensors imposes stringent noise requirements on the system components, including the large area photoreceiver front ends. The proposed innovation utilizes dual depletion region technology to produce a large area (1mm diameter) 2x2 quad p-i-n InGaAs photodiode array hav...

Phase 2 STTR

Institution: University of Virginia

Agency: Defense Advanced Research Projects Agency
Topic: ST051-007
Budget: 11/27/06 - 02/27/09

In Phase II, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.65 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth DC to 18 GHz,(d) Wavelength response of 1300 to 1550 nm, and (e) OIP3 of +50 dBm. Three different photodiode designs will be tested for maximum sat...

Load More