Advanced Technology Materials, Inc.

Danbury, CT 06810
http://www.atmi.com/
325 Employees

SBIR Award Summary

Total Number of Awards 131
Total Value of Awards $31.4MM
First Award Date 01/01/87
Most Recent Award Date 09/29/98

131 Awards Won

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO97-014
Budget: 09/29/98 - 09/29/00

SiC is an ideal semiconductor for high power, high temperature, and high frequency electronic devices due to its intrinsic material properties. However, supplies of high quality, low cost SiC substrates and epitaxial films are required before high-yielding SiC device fabrication, and hence widespread commercialization, can occur. In the propos...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO95-014
Budget: 09/29/98 - 09/29/00

Radiation hardened ferroelectric random access memory (FeRAM) devices have potential uses in numerous military applications. Until recently, FeRAMs have relied on lead zirconate titanate (PZT) as the storage material. However, a new class of materials promises to offer higher device reliability and lower operation voltages. The layered perovs...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO98-014
Budget: 05/19/98 - 11/18/98

Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can intera...

Phase 1 SBIR

Agency: Air Force
Topic: AF98-244
Budget: 04/26/98 - 01/26/98

Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at ...

Phase 1 SBIR

Agency: Air Force
Topic: AF98-168
Budget: 04/09/98 - 01/09/99

GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN phot...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO98-014
Budget: 03/16/98 - 09/15/98

Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dop...

Phase 2 SBIR

Agency: Air Force
Topic: AF97-120
Budget: 03/10/98 - 03/10/00

The III-V nitrides are promising materials for high power and high frequency devices due to the wide bandgaps, high electron mobility, and heterostructure field effect transistors (HFETs) capability in this alloy system. GaN/AlGaN HFETs on sapphire substrates with promising DC and microwave characteristics have recently been demonstrated but fu...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: SDIO93-014
Budget: 12/15/97 - 12/15/99

The III-V nitrides have the potential to outperform both GaAs and SiC in microwave power applications due to the wide bandgap, high breakdown voltage, high electron velocity and high conduction band discontinuity attainable in AlGaN/GaN heterostructures. GaN-based FETs would find widespread commercial use as power amplifiers in base station tra...

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB972-052
Budget: 09/29/97 - 05/28/98

Phase 2 SBIR

Agency: Air Force
Topic: AF96-127
Budget: 08/08/97 - 12/08/99

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices,...

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