Boston Nitride Technologies, Inc.

49 Angela Street
Canton, MA 02021
5 Employees

SBIR Award Summary

Total Number of Awards 4
Total Value of Awards $295K
First Award Date 05/12/00
Most Recent Award Date 01/01/02

Key Personnel

Last Name Name Awards Contact
Schubert Dr. E.Fred Schubert 3 Message
Campbell Joe C. Campbell 2 Message
Graff John Graff 1 Message

4 Awards Won

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2002
Budget: 01/01/02 - 12/31/02

This Small Business Innovation Research Phase I project will develop a highly conductive p-type AlGaN by construction of AlGaN superlattices. The material p-type AlGaN is key to many optoelectronic and some electronic semiconductor devices. Many characteristics of semiconductor devices containing p-type AlGaN (that is, power efficiency, maximum ...

Phase 1 STTR

Institution: Cornell University

Agency: Missile Defense Agency
Topic: BMDO00T001
Budget: 09/20/00 - 03/20/01

This STTR program is aimed to develop a novel very low resisitivity Ohmic contacts to n-AlGaN/GaN heterostructures, which are a building block of high power microwave high electron mobility transistors (HEMTs). Virtually all characteristics of high power transistors depend on the Ohmic contact resistance including: wall plug efficiency, heating ...

Phase 1 STTR

Institution: University of Texas at Austin

Agency: Missile Defense Agency
Topic: BMDO00T001
Budget: 09/20/00 - 03/20/01

PN-junction AlGaN photodetectors with a cut-off wavelength shorter than 300 nm (solar blind) have been recently demonstrated. This type of device, which holds a potential to deliver performance not matched by any other types of photodetectors, are required for several defense and civilian applications. However, the efficiency of these devices is...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 05/12/00 - 11/12/00

Wide bandgap (WBG) semiconductors, namely SiC and GaN, have been considered ideal materials for high power microwave devices since they were first studied over 30 years ago. Among all GaN related technologies, p-type doping of GaN, and low resistivity ohmic contacts to p-GaN are the least mature ones. At the same times, virtually all characteris...