Applied Ceramics Research CO.

1420 Owl Ridge Dr.
Colorado Springs, CO 80919
http://[email protected]
3 Employees

SBIR Award Summary

Total Number of Awards 5
Total Value of Awards $986K
First Award Date 08/02/99
Most Recent Award Date 06/19/02

Key Personnel

Last Name Name Awards Contact
Kammerdiner Dr. Lee Kammerdiner 5 Message

5 Awards Won

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 06/19/02 - 06/18/04

The use of high dielectric constant materials in semiconductor integrated circuits is greatly expanded due to their obvious advantage of providing higher capacitance per unit area compared to the more conventional silicon oxide/silicon nitride capacitors. There are at least three general areas where these are needed: 1) DRAM memory cells, 2) sm...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 05/22/01 - 11/23/01

Recently, there has been more emphasis on a system-on-a-chip (SOC) to integrate logic, analog functions, volatile and non-volatile memory onto a single chip. In order to overcome limitations of conventional floating gate non-volatile memory devices, we are proposing the non-volatile memory elements based on silicon nanocrystals. The silicon nano...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 05/22/01 - 11/22/01

This Small Business Innovation Research Phase I project proposes the development of novel materials to be used in a ferroelectric FET (Field Effect Transistor) memory cell. The proposed memory cell is non-volatile utilizing a non-destructive readout, single transistor design. As a result it has unlimited endurance, very small cell size and fas...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 05/11/00 - 11/11/00

High dielectric constant materials are increasingly important for pushing the state of the art in semiconductor integrated circuits. They are necessary in applications that require high capacitance values per lateral area. One example technology currently under development uses Barium Strontium Titanate BST), planned for use in DRAM's. Althou...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO99-014
Budget: 08/02/99 - 02/01/00

We are proposing the research and development of a non-destructive-read-out ferroelectric gate (NDRO) memory. In a ferroelectric gate memory, ferroelectric thin films like strontium bismuth tantalate are used as the gate dielectric. In order to prevent the inter-diffusion of the ferroelectric thin film into the silicon substrate, thin buffer l...