Brewer Science, Inc.

2401 Brewer Drive
Rolla, MO 65401
http://www.brewerscience.com
272 Employees

SBIR Award Summary

Total Number of Awards 20
Total Value of Awards $3.82MM
First Award Date 01/01/86
Most Recent Award Date 12/29/08

Key Personnel

Last Name Name Awards Contact
Neef Dr. Jody Neef 1 Message
Puligadda Ms. Rama Puligadda 1 Message
Guerrero Dr. Douglas J. Guerrero 3 Message
Moss Mary G. Moss 4
Brewer Dr. Terry Brewer 3
Flain Tony D. Flain PhD 2
Meador Mr. Jim Meador 2
Keith Shari Keith 1
Chen David Chen 1
Shih Wu-Sheng Shih 1 Message
Flaim Tony D Flaim 1

20 Awards Won

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB082-014
Budget: 12/29/08 - 08/30/09

In this Phase I SBIR program, Brewer Science, Inc. (BSI), a leader in innovative microelectronic materials, and our pioneering additive manufacturing partner will develop and demonstrate a cost-effective materials production process for fabricating high-performance thin-film transistors (TFTs) using single-wall carbon nanotubes (SWCNTs) and manu...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-014
Budget: 05/13/02 - 11/13/02

Acute competitive pressures to produce ever faster and more complex integrated circuits at diminishing costs continually drive IC manufacturers to find new, improved materials and processes without investing in new equipment sets. Currently in the microelectronic industry, most equipment sets utilize deep ultraviolet (DUV) lasers in photolithog...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 07/11/01 - 11/17/01

Ion implanted, thin polymer films exhibit a large temperature coefficient of resistance which suggest their application in microbolometer arrays used for infrared (IR) imaging and temperature mapping. Compared to current microbolometer designs which require a series of difficult deposition steps, an ion implanted polymer-based device requires o...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 05/09/01 - 11/08/01

This SBIR Phase I will develop novel chemistry platforms for 157nm bottom anti-reflective coatings (BARC's). Recent improvements in BARC's, photoresist's, and optical processes at deep ultra-violet have enabled resolution targets approaching 0.12 microns. The semiconductor industry technology roadmap calls for the introduction of 193nm process...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO98-014
Budget: 02/28/00 - 02/27/02

Deep ultra violet (248mm)exposure systems are being used for the production of advanced semiconductor devices, with 193nm to be the next wavelengh of interest in submiron optical lithography. Due to the high refelectivity of semiconductor substrates at 193nm, there will be strong need for bottom organic anti-reflective coatings (BARC's) to enab...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO99-014
Budget: 05/21/99 - 11/20/99

Interlayer dielectrics with low dielectric constants (k

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO98-003
Budget: 05/11/98 - 11/10/98

Ion-implanted, thin polymer films exhibit a large temperature coefficient of resistance which suggests their application in microbolometer arrays used for infrared ( IR) imaging and temperature mapping. Compared to current microbolometer designs which require a series of difficult deposition steps, an ion-implanted polymer-based device requires ...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO98-014
Budget: 04/21/98 - 10/20/98

A long-standing trend in the integrated circuit industry is to reduce pattern geometries on semiconductor substrates. To continue this trend, the next exposure wavelength after on-going deep-ultraviolet (248 nm) will be 193 nm. This SBIR Phase I program will identify and develop thermosetting bottom anti-reflective coatings (BARCs) meeting requi...

Phase 2 SBIR

Agency: Air Force
Topic: AF97-123
Budget: 03/17/98 - 07/17/00

The inability to deposit adherent copper directly onto aluminum is a longstanding problem in the manufacture of flip-chip devices. A separate layer such as TiN is currently required to promote adhesion and good electrical contact. The Phase II program is intended to fully characterize a spontaneous galvanic displacement process for selectively...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO97-014
Budget: 05/08/97 - 11/07/97

Load More