Kyma Technologies, Inc.

8829 Midway West Road Array
Raleigh, NC 27617
http://www.kymatech.com
27 Employees

SBIR Award Summary

Total Number of Awards 57
Total Value of Awards $19MM
First Award Date 03/23/00
Most Recent Award Date 07/11/16

57 Awards Won

Phase 1 STTR

Institution: Research Triangle Institute

Agency: Navy
Topic: N16A-T023
Budget: 07/11/16 - 05/10/17

High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to Si), which suggests this material is well-suited for power device applications. Kyma Technologies proposes to design a deposition system capable of ...

Phase 2 SBIR

Agency: Department of Energy
Topic: 11b
Budget: 04/15/16 - 04/14/18

The use of non-native substrates for GaN-based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defe...

Phase 1 SBIR

Agency: Navy
Topic: N151-046
Budget: 08/11/15 - 02/07/16

Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly into a GaN FET epi process.

Phase 1 STTR

Institution: University of Illinois, Chicago

Agency: Navy
Topic: N15A-T023
Budget: 07/06/15 - 05/06/16

Kyma will develop and model a modular high rep rate (>100kHz) photoconductive switch using GaN and commercial-off-the-shelf laser diodes. The switch will be designed to switch >1.5kV at >150A in 5-10ns.

Phase 1 SBIR

Agency: Department of Energy
Topic: 11a
Budget: 06/08/15 - 03/07/16

Crystalline aluminum nitride AlN) materials have the potential to support a new generation of ultra-high performance power electronics. While great progress has been realized in producing high structural quality AlN substrates, there is currently no viable method for controllably producing electrically conductive AlN device layers on top of such...

Phase 2 SBIR

Agency: Navy
Topic: N131-068
Budget: 01/01/15 - 12/31/15

Gallium Nitride is a wide bandgap, highly transparent material with a second order non-linear susceptibility similar to that of LiNbO3 with high thermal conductivity. As such, it is of interest for use as a quasi-phase matching material for several high power nonlinear devices. Kyma Technologies will grow thick (~1mm) periodically oriented GaN c...

Phase 1 STTR

Institution: Pennsylvania State University

Agency: Army
Topic: A14A-T008
Budget: 08/28/14 - 02/22/15

Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4 in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of ...

Phase 2 SBIR

Agency: Advanced Research Projects Agency - Energy
Topic: 2013
Budget: 01/01/14 - 12/31/14

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negat...

Phase 1 SBIR

Agency: Advanced Research Projects Agency - Energy
Topic: 2013
Budget: 01/01/14 - 12/31/14

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negat...

Phase 2 SBIR

Agency: Department of Energy
Topic: 11B-2014
Budget: 01/01/14 - 12/31/14

The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high def...

Load More