Bandgap Technologies, Inc.

1428 Taylor St.
Columbia, SC 29201
http://www.bandgap.com
7 Employees

SBIR Award Summary

Total Number of Awards 11
Total Value of Awards $3.91MM
First Award Date 06/01/00
Most Recent Award Date 03/31/03

Key Personnel

Last Name Name Awards Contact
Stratiy Mr. Georgiy Stratiy 1 Message
Muzykov Dr. Peter Muzykov 1 Message
Khlebnikov Mr. Yuri Khlebnikov 7 Message
Khlebnikov Mr. Yuri Khlebnikov 2 Message

11 Awards Won

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA02-012
Budget: 03/31/03 - 09/30/04

Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produce large diameter bulk SiC boules with low defect density offers a significant impetus for the widespread commercialization of SiC-based devices. ...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO-014
Budget: 11/04/02 - 11/13/04

The development of a process to produce bulk silicon carbide (SiC) boules with alternate crystallographic orientations, specifically the a-orientation, which is perpendicular to the normally-grown c-orientation crystal, offers significant improvements in the SiC semiconductor electronic properties. Specifically, the electron mobility will incre...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-014
Budget: 05/09/02 - 10/31/02

This Phase I program is aimed at demonstrating the principle of an approach for the growth of 4H-SiC boules 50 mm in diameter but of length equal to 50 mm, which is approximately twice the length of boules grown by convential approaches. Also in Phase I, the grown boules will be sliced into wafers, lapped, and polished; the polished wafers will...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-014
Budget: 05/01/02 - 10/31/02

This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I program, surface preparation of 4H-SiC wafers 50 mm (2 inches) in diameter will be demonstrated. Also in Phase I, the prepared (treated) surface of the S...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA00-014
Budget: 07/10/01 - 03/02/03

The development of a process to produce low defect density silicon carbide (SiC) boules at high growth rates will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SiC for high power and high temperature device applications. The objectives of this Phase II project is to improve the process development of...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 04/01/01 - 03/31/03

The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SI SiC for microwave and RF system applications. The objective of this Phase II project is to improve and perfect the process development o...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 04/01/01 - 12/31/01

Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstrating a novel technique that will significantly reduce the mechanical stress in SiC during boule growth. In phase I, we will demonstrate that by the p...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 04/01/01 - 12/31/01

This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. Also in Phase I, we will slice the off-axis boules into wafers, lap and polish them, and perform structural and electrical characterization of the...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 04/01/01 - 12/31/01

This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed source material synthesis technique will produce SiC starting material that is far superior to presently used material in terms of purity and process...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 06/01/00 - 10/31/00

This Phase I program is aimed at demonstrating the feasibility of a novel rapid growth rate technique for bulk silicon carbide (SiC) single crystal growth. The growth rate is expected to be approximately 3 times higher (3 mm/hr) than that of present conventional methods using the sublimation growth method. This technique has the potential to y...

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