Cova Technologies, Inc.

5061 North 30th Street, Suite 105
Colorado Springs, CO 80919
http://www.covatech.com
5 Employees

SBIR Award Summary

Total Number of Awards 6
Total Value of Awards $1.41MM
First Award Date 01/01/00
Most Recent Award Date 07/24/03

Key Personnel

Last Name Name Awards Contact
Huebner Mr. Gregory Huebner 2 Message
Olariu Dr. Viorel Olariu 1 Message
Luttrell Mr. Brad Luttrell 1 Message
Huebner Mr. Gregory. G. Huebner 1 Message
Huebner Mr. Huebner 1

6 Awards Won

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-049
Budget: 07/24/03 - 01/24/04

Nonvolatile semiconductor memory is critical in many DOD applications - particularly when radiation hardening is required. Ferroelectric memory technology offers superior performance, notably better write-endurance and write-speed, lower power consumption and it is not subject to the scaling limitations of other technologies. We propose to devel...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA00-014
Budget: 08/15/02 - 08/13/04

Ferroelectric memories have been under development for more than 15 years at an industry wide cost of several hundred million dollars. First commercial products were introduced in 1992, but ferroelectric memories have not yet become mainstream despite unquestionable technical advantages (e.g. non-volativity, speed, power and endurance). The r...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-016
Budget: 08/05/02 - 03/10/03

Interest in ferroelectric technology for Nonvolatile Memory Applications has increased in recent years and first products are now commercially available. Ferroelectric memories offer many advantages over competing technologies, but they still suffer from unresolved problems that have prevented them of becoming mainstream products. One of thes...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-014
Budget: 07/01/02 - 03/01/03

This Small Business Technology Transfer Phase I project develops fundamental technology for high density, non-volatile resistive memory (NVM) based on two-terminal, resistive type devices where electric pulse induced resistive change (EPIR) determines the memory state. A class of colossal magnetoresistive (CMR) materials has demonstrated a cons...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 04/07/00 - 10/06/00

Interest in ferroelectric technology for Nonvolatile Memory Applications has increased in recent years and first products are now commercially available. Ferroelectric memories offer many advantages over competing technologies, but they still suffer from unresolved problems that have prevented them of becoming mainstream products. One of these i...

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2000
Budget: 01/01/00 - 12/31/00