Iii-n Technology, Inc.

2033 Plymouth Road
Manhattan, KS 66, KS 66503
8 Employees

SBIR Award Summary

Total Number of Awards 4
Total Value of Awards $944K
First Award Date 05/21/01
Most Recent Award Date 12/13/07

Key Personnel

Last Name Name Awards Contact
Jiang Dr. Hongxing Jiang 3 Message
Fan Dr. Zhaoyang Fan 1 Message

4 Awards Won

Phase 1 SBIR

Agency: Army
Topic: A07-082
Budget: 12/13/07 - 06/13/08

The goal of this SBIR project is to develop next generation inorganic semiconductor based emissive microdisplays with the following merits: Much higher brightness and power efficiency (5 x) than the current filter based LCD and OLED microdisplays. Resolution and pixel density higher than 15 micron per pixel with VGA, SVGA and higher format. R...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-034
Budget: 08/13/03 - 02/09/04

The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilities as well as unprecedented high breakdown voltages by the P.I.s research group at Kansas Stat...

Phase 2 SBIR

Agency: Navy
Topic: N01-045
Budget: 07/17/02 - 07/06/04

The research proposed here is built on the promising results obtained in the Phase I project. During Phase I research, we have further improved blue micro-size light emitter output power efficiencies by optimizing the material qualities as well as device structures. Several integrated photonics devices have been fabricated and their operation ...

Phase 1 SBIR

Agency: Navy
Topic: N01-045
Budget: 05/21/01 - 11/21/01

The research proposed here is built on the recent successful fabrication of the first electrically-pumped III-nitride micro-size LED, micro-size LED arrays, and waveguides by the principal investigator's research group at Kansas State University. New physical phenomena and properties begin to dominate as the device size scale approaches the wav...