Optiswitch Technology Corp.

6355 Nancy Ridge Drive
San Diego, CA 92121
http://www.optiswitch.com
20 Employees

SBIR Award Summary

Total Number of Awards 9
Total Value of Awards $2.8MM
First Award Date 03/23/01
Most Recent Award Date 10/31/08

Key Personnel

Last Name Name Awards Contact
Giorgi Dr. David Giorgi 8 Message
Navapanich Mr. Tajchai Navapanich 1 Message

9 Awards Won

Phase 1 SBIR

Agency: Army
Topic: A08-043
Budget: 10/31/08 - 04/30/09

This topic examines current state-of-the-art in solid state switches and develops a design that goes beyond today's capabilities. The Extreme Break-Over Diode (SBOD) switch represents enabling technology for defense applications requiring compact size and weight, long lifetime, fast turn on, fast turn off time, and high-efficiency triggering. ...

Phase 1 SBIR

Agency: Air Force
Topic: AF071-199
Budget: 03/30/07 - 12/30/07

OptiSwitch Technology Corporation (OTC) in collaboration with the University of Southern California (USC) proposes the development of a compact, high voltage, and high repetition rate solid-state pulse generator for nonthermal ignition and for other applications including plasma surface modification. The fully solid-state pulse generator module...

Phase 2 SBIR

Agency: Air Force
Topic: AF05-196
Budget: 04/17/06 - 08/17/08

OptiSwitch Technology Corporation is proposing to develop a high temperature (200-250 degC) all-optical gate drive for SiC power semiconductor devices. The optical control makes it less susceptible to EMI and allows isolation between the control and power circuits. The system will be composed two fiber coupled laser diodes driven by two compac...

Phase 1 SBIR

Agency: Air Force
Topic: AF05-196
Budget: 05/26/05 - 02/26/06

Optiswitch Technology Corporation (OTC) proposes to investigate and demonstrate a cost effective approach for optically controlled Fly-By-Light (FBL) power switches for severe environments. Silicon carbide (SiC) devices are expected to show superior performance over Silicon and Gallium Arsenide (GaAs) devices for FBL applications which fall in ...

Phase 1 SBIR

Agency: Department of Energy
Topic: 2004
Budget: 01/01/04 - 12/31/04

76360-To improve the reliability, increase the lifetime and reduce the overall costs of high peak power modulators for colliders, a replacement switch for the Hydrogen Thyratron is needed. Therefore, this project will design, fabricate, and test a high-voltage, light-activated, solid-state switch as a direct replacement for the Hydrogen Thyratr...

Phase 2 SBIR

Agency: Defense Threat Reduction Agency
Topic: DTRA01-003
Budget: 09/19/02 - 09/18/04

In the Phase I SBIR program OptiSwitch Technology Corporation (OTC) demonstrated that an advanced solid-state switch composed of a purely optically triggered switch and a purely electrically triggered switch can replace the rail gap switch in DTRA's Fast Marx Generator (FMG). Being solid-state it will have longer life, higher reliability, highe...

Phase 2 SBIR

Agency: Air Force
Topic: AF01-168
Budget: 07/29/02 - 11/29/04

The key to achieving a compact yet reliable pulse power system lies in the switches. The ideal switch would be modular and scalable thus allowing for mega-volts and mega-amps of current to be switched with nanosecond rise-times. OptiSwitch Technology Corporation (OTC) proposes to develop a revolutionary optically activated thyristor fabricated...

Phase 1 SBIR

Agency: Defense Threat Reduction Agency
Topic: DTRA01-003
Budget: 05/18/01 - 11/17/01

OptiSwitch Technology Corporation proposes the development of a high-power, optically activated solid-state switch for the replacement of the rail gap switches on DTRA's Fast Marx Generator (FMG). The switch is packaged into 200kV/250kA modules that directly connect to the output plates of the fast capacitor. The switch is based on direct conn...

Phase 1 SBIR

Agency: Air Force
Topic: AF01-168
Budget: 03/23/01 - 12/23/01

OTC proposes the development of a high power optically activated solid-state switch for the enhancement of current pulse power and power electronic systems. The switch is packaged into 100kV/100kA modules with a rise-time of