Celis Semiconductor Corp.

5475 Mark Dabling Blvd., Suite
Colorado Springs, CO 80918
http://www.celis-semi.com
8 Employees

SBIR Award Summary

Total Number of Awards 4
Total Value of Awards $296K
First Award Date 07/01/02
Most Recent Award Date 05/17/04

Key Personnel

Last Name Name Awards Contact
DeVilbiss Mr. Alan DeVilbiss 1 Message
Derbenwick Dr. Gary Derbenwick 1 Message
Kamp Mr. David Kamp 2 Message

4 Awards Won

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA04-036
Budget: 05/17/04 - 02/17/04

Existing nonvolatile semiconductor memory, such as Flash memory, is system life-limiting because of its softness to radiation exposure. Because commercial wafer fabrication processes change, the radiation hardness fluctuates uncontrollably. The objective of this SBIR proposal is to demonstrate that a non-destructive read-out (NDRO) ferroelectr...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-099
Budget: 07/21/03 - 01/20/04

The objective of this proposal is to demonstrate the feasibility of producing radiation-hardened, nonvolatile EPIR colossal magnetoresistive semiconductor Non-Destructive Read Out (NDRO) memory for military and space applications, such as for SBIRS-Low. The approach in of this Phase I program is to characterize PrCaMnO (PCMO) thin films for use ...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-089
Budget: 07/10/03 - 01/09/04

An encryption chip design is envisioned that utilizes medium to large capacity nonvolatile memory to achieve ultra high-speed encryption as opposed to common implementations of high-speed encryption algorithms that are processor-based. The design will address the security issue that comes with the increased data exposure of high-speed encryptio...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-008
Budget: 07/01/02 - 03/01/03

The objective of this proposal is to demonstrate the feasibility of producing very dense, radiation-hardened, low-power ferroelectric semiconductor memory for nonvolatile data storage in spacecraft, such as the SBIRS-Low. The approach to be demonstrated in this proposal is to use a one-transistor ferroelectric memory cell technology, the feasib...