Fairfield Crystal Technology, LLC

8 South End Plaza
New Milford, CT 06776

SBIR Award Summary

Total Number of Awards 10
Total Value of Awards $3.32MM
First Award Date 01/01/05
Most Recent Award Date 01/01/14

Key Personnel

Last Name Name Awards Contact
Wang Shaoping Wang 10 Message
Timmerman Andrew G. Timmerman 5 Message

10 Awards Won

Phase 2 SBIR

Agency: Advanced Research Projects Agency - Energy
Topic: 1-2013
Budget: 01/01/14 - 12/31/14

The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior...

Phase 1 SBIR

Agency: Advanced Research Projects Agency - Energy
Topic: 1-2013
Budget: 01/01/13 - 12/31/13

The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior...

Phase 2 SBIR

Agency: National Science Foundation
Topic: D4-2010
Budget: 01/01/10 - 12/31/10

This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts in the last decade, affordable GaN wafers and substrates of large diameters have not been widely available commercially, which hinders commercializa...

Phase 1 SBIR

Agency: National Science Foundation
Topic: AM1-2010
Budget: 01/01/10 - 12/31/10

This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high powe...

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2009
Budget: 01/01/09 - 12/31/09

This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel technique for producing freestanding GaN wafers and substrates. High-quality freestanding GaN substrates are important for fabrication of high-performance light emitters, such as blue laser diodes, UV LEDs, and UV detectors that have many indispensable applic...

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2009
Budget: 01/01/09 - 12/31/09

This Small Business Innovation Research (SBIR) Phase I project will demonstrate a novel crystal growth technique for volume production of large diameter, high quality cadmium sulfide (CdS) single crystals suitable as lattice-matched substrates for fabricating II-VI-based light emitters, particularly ZnCdMgSe quantum-well light emitting devices a...

Phase 1 SBIR

Agency: National Science Foundation
Topic: 2008
Budget: 01/01/08 - 12/31/08

This Small Business Innovation Research Phase I research project will investigate a novel sublimation crystal growth technique for producing large diameter, high quality zinc sulfide (ZnS) single crystal substrates suitable for fabricating specific UltraViolet (UV) detectors. These UV detectors that are visible/solar-blind with high detection ef...

Phase 2 SBIR

Agency: Department of Energy
Topic: 2006
Budget: 01/01/06 - 12/31/06

Nitride-based, high-brightness, ultraviolet, visible, and white light emitting diodes are candidate devices for replacing incandescent light bulbs and fluorescent light fixtures in general illumination applications, due to their tremendous energy saving potential, long lifetime, and high efficiency. However, the poor crystalline quality of the ...

Phase 1 SBIR

Agency: Department of Energy
Topic: 2006
Budget: 01/01/06 - 12/31/06

Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth technique for producing high-quality, large-diameter, ZnSe single crystals. This project will investigate a novel high-temperature, physical-vapor-...

Phase 1 SBIR

Agency: Department of Energy
Topic: 2005
Budget: 01/01/05 - 12/31/05

78072S III-V nitride-based, high brightness, UV and visible light emitting diodes (LEDs) are of a great interest for general illumination, but the low light output efficiencies of current high brightness LEDs are still inadequate. A key material issue preventing the achievement of higher light output efficiency in LEDs is the poor crystalline q...

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