Technologies & Devices Internatio

8660 Dakota Dr.
Gaithersburg, MD 20877
http://www.tdii.com
23 Employees

SBIR Award Summary

Total Number of Awards 28
Total Value of Awards $6.56MM
First Award Date 03/23/98
Most Recent Award Date 05/11/06

Key Personnel

Last Name Name Awards Contact
Melnik Dr. Yuriy Melnik 2 Message
Syrkin Dr. Alexander Syrkin 3 Message
Dmitriev Dr. Vladimir Dmitriev 23 Message
Mastro Dr. Michael Mastro 1 Message

28 Awards Won

Phase 2 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: MDA04-020
Budget: 05/11/06 - 07/31/08

TDI proposes to develop innovative cost-effective manufacturing technology for thick (>200 microns) low defect GaN and AlN epitaxial materials on large area substrates. Proposed technical approach is based on hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce GaN epitaxial layers with low defect density and high carrier ...

Phase 2 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB032-044
Budget: 04/25/05 - 07/20/07

The main goal for this project is to develop manufacturing technology for low defect substrate materials for high efficient UV light emitting devices based on group III nitride semiconductors. Three types of substrate materials are primary targets of this work: (1) AlGaN-on-sapphire templates, (2) AlN-on-SiC templates, and (3) free-standing AlG...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA04-020
Budget: 05/14/04 - 11/13/04

The goal of this proposal is to demonstrate large area manufacturing technology for high performance AlGaN/GaN high electron mobility transistors (HEMTs) for radar and RF applications. TDI proposes to develop novel epitaxial technology for HEMTs structures on large area sapphire substrates based on hydride vapor phase epitaxial (HVPE) approach....

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA04-055
Budget: 05/04/04 - 11/04/04

TDI proposes to develop high purity GaN materials having room temperature carrier concentration from 1014 cm-2 down to 1012 cm-2 using novel technological approach based on advanced hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce epitaxial layers and bulk GaN materials with low defect density and high carrier mobility...

Phase 1 SBIR

Agency: Army
Topic: SB032-044
Budget: 01/14/04 - 09/15/04

Historically, hydride vapor phase epitaxy (HVPE) was the first technique to produce high quality thick GaN epitaxial layers. Resent progress in growing of multi-layer structure by HVPE in TDI make it possible to develop this technique to fabricate multi-layer GaN- AlxGa1-xN and AlxGa1-xN -AlyGa1-yN heterostructures for light emitting diodes (LED...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-014
Budget: 09/02/03 - 09/02/05

TDI proposes to develop novel multi-wafer HVPE technology for mass production of large area GaN (and AlGaN/GaN) epitaxial materials. The HVPE technique is a well-established, cost-effective method to grow GaN (and AlGaN) epitaxial layers on sapphire and SiC substrates. Recent advances at TDI have proven HVPE to be a reliable process for fabric...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-041
Budget: 07/23/03 - 01/23/04

The goal of this proposal is to develop epitaxial growth technology and device processing technology for GaN-based HEMTs with stable and reproducible operations. TDI recently demonstrated the first-ever nitride HEMT grown by hydride vapor phase epitaxy (HVPE). Due to intrinsic advantages of HVPE technology, these results open an opportunity t...

Phase 1 SBIR

Agency: Office of the Secretary of Defense
Topic: OSD02-EP02
Budget: 12/15/02 - 06/15/03

TDI proposes to develop GaN pn diodes for power fast-switching applications. The devices will employ low defect bulk n+-GaN substrates, low doped n-GaN voltage-blocking region grown, and Ga(Al)N p+-emitter. The main target of the program is to demonstrate GaN power rectifiers with blocking voltage > 3.3 kV, on-state resistance 10 A. The mai...

Phase 1 SBIR

Agency: Office of the Secretary of Defense
Topic: OSD02-EP02
Budget: 12/15/02 - 06/15/03

TDI proposes to develop novel silicon carbide high-power large area Schottky diodes for military and commercial applications based on epi-wafers with reduced defect density. During last few years, TDI developed technology methods, which significantly reduce density of defects limiting device performances in silicon carbide. Recently TDI has demo...

Phase 1 STTR

Institution: University of Florida

Agency: Missile Defense Agency
Topic: BMDO02T-00
Budget: 08/01/02 - 01/30/03

AlGaN/GaN HEMTs offer excellent dc and rf device performance over a broad range of contact dimensions. Future refinements should focus on reducing defect density in the epi layers that can lead to current collapse and thereby provide more stable operation over commercially significant periods. There is an urgent need for insulating, lattice-matc...

Load More