Peregrine Semiconductor Corp.

6175 Nancy Ridge Drive
San Diego, CA 92121
http://www.peregine-semi.com
200 Employees

Market Performance

NASDAQ: PSMI
52 Week High $5
52 Week Low $13

SBIR Award Summary

Total Number of Awards 11
Total Value of Awards $3.94MM
First Award Date 04/01/99
Most Recent Award Date 08/18/05

Key Personnel

Last Name Name Awards Contact
Reedy Dr. Ron Reedy 6 Message
Kuznia Dr. Charlie Kuznia 3 Message
Tabbert Chuck Tabbert 1 Message
Reedy Ronald E. Reedy 1

11 Awards Won

Phase 2 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB031-016
Budget: 08/18/05 - 06/18/08

The phase I program identified an immediate DOD need for FOCUTSpak technology in military avionics. Therefore, the goal of this program is to create prototype parallel modules suitable for applications such as the JSF, UAV and F16 programs. This prototype program will be driven by the requirements and specifications supplied by LMTS, the curre...

Phase 1 SBIR

Agency: Air Force
Topic: AF04-026
Budget: 04/15/04 - 04/15/05

The project will enable flexible use of the highest performance active devices such as PHEMT and HBT GaAs or InP by means of a novel chip-on-chip (COC) flip-chip integration technique. The project will include design; manufacture and test of one integrated circuit each for transmit and receive sides, with each chip providing amplification, phase...

Phase 1 SBIR

Agency: Navy
Topic: N03-178
Budget: 11/05/03 - 05/05/04

This proposal describes integrated circuit techniques to perform built-in-test (BIT) on general fiber links (single-mode, multi-mode and at any wavelength). These circuits are packaged alongside already available transceiver component to add BIT functionality. This proposal also describes the integration of these techniques into an 850 nm VCSE...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA03-056
Budget: 07/25/03 - 01/25/04

The objective of this proposal is to develop a truly strategic radiation hard SRAM-based (i.e., re-programmable) Field Programmable Gate Array, FPGA. Such a chip would substantially reduce the cost and time-to-market to develop advanced radiation hard systems. The chip will be manufactured in an advanced silicon-on-sapphire (SOS) technology call...

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB031-016
Budget: 05/30/03 - 01/30/04

The overall objective of the project is to develop a technology for providing optical interconnections to high performance ICs that scale to greater than 1 Tbps aggregate bandwidth and fit within the IC industry cost structure. This technology is radiation hard and well suited for military applications. The objective of Phase I is to understand...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 03/27/03 - 03/27/05

This document is an application for a Phase II SBIR on the development and characterization of radiation hardened and commercial non-volatile EEPROM memory base technology for embedded applications in Mixed Signal, RFIC and digital ASICs. Peregrine Semiconductor Corporation was awarded the Phase I SBIR for the evaluation and feasibility of the u...

Phase 1 SBIR

Agency: Navy
Topic: N02-041
Budget: 05/16/02 - 11/15/02

The objective of this proposal is to develop technology that enables direct integration of power and thermal management functions at the component level of transmit and receive phased array antenna modules (TRAM). The project will enable flexible use of the highest performance active devices such as PHEMT and HBT GaAs or InP by means of a novel ...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO02-003
Budget: 05/14/02 - 11/14/02

The objective of this proposal is to develop near UV (NUV) and blue light CCD arrays with high sensitivity, high dynamic range and radiation hardness. A device structure is proposed that is inherently sensitive to short wavelength energy while being inherently insensitive to visible and IR wavelengths. Using a fully depleted UTSir CMOS on sapphi...

Phase 2 SBIR

Agency: Air Force
Topic: AF99-005
Budget: 05/15/01 - 07/18/04

The objective of this SBIR project is to produce a single chip GPS receiver using an advanced silicon on sapphire (SOS) technology known as Ultra Thin Silicon (UTSi) CMOS. The chip will be suitable for both commercial and military applications and result in significant cost (12%), size (up to 70%) and power consumption (up to 50%) reduction com...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-014
Budget: 07/06/00 - 01/06/01

The objective of this proposal is to demonstrate and characterize the radiation performance of a new EEPROM cell fabricated in Ultra Thin Silicon, UTSi. Peregrine Semiconductor Corp. has invented and patented a novel non-volatile memory cell. The cell has been shown to be fully functional but has not been fully characterized or tested for use in...

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