SJT MICROPOWER INC

16411 N SKYRIDGE LN
Fountain Hills, AZ 85268
3 Employees

SBIR Award Summary

Total Number of Awards 10
Total Value of Awards $2.65MM
First Award Date 01/01/06
Most Recent Award Date 01/01/11

Key Personnel

Last Name Name Awards Contact
Ervin Mr. Joseph Ervin 1 Message
Disalvo Ms. Pamela Disalvo 2 Message
Wilk Seth J Wilk 3
Ervin Joseph Ervin 2 Message
DiSalvo Pamela M. DiSalvo 2 Message
Wilk Seth Wilk 3 Message
Thornton Trevor Thornton 3 Message
Lepkowski William Lepkowski 1 Message

10 Awards Won

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 10-1-X6.02
Budget: 01/01/11 - 12/31/11

We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integrated alongside conventional MOSFETs with no changes to the process flow. Unlike the MOSFETs however, the MESFETs do not require a fragile metal-oxi...

Phase 2 SBIR

Agency: National Aeronautics and Space Administration
Topic: 09-2-X1.03
Budget: 01/01/11 - 12/31/11
PI: Seth Wilk

We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator is stable under all load conditions without an external compensation capacitor, thereby reducing the mass/volume of the power management system and ...

Phase 2 SBIR

Agency: Department of Health & Human Services
Topic: PA-08-050
Budget: 05/01/10 - 04/30/13

DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted inside the human body. Currently, it is difficult to communicate with devices implanted within the human body and the present commercial technologies do...

Phase 2 STTR

Institution: Arizona State University

Agency: Defense Advanced Research Projects Agency
Topic: ST071-007
Budget: 03/18/10 - 03/31/12
PI: Seth Wilk

Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future, highly scaled low voltage CMOS applications. Our ...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 10-1-X1
Budget: 01/01/10 - 12/31/10
PI: Seth Wilk

We have developed a fully integrated LDO regulator using a patented transistor technology that can be manufactured in high volume commercial semiconductor foundries with no changes to the process flow. The regulator is stable under all load conditions without the need for an external compensation capacitor thereby reducing the mass/volume of the...

Phase 2 SBIR

Agency: Department of Health & Human Services
Topic: PA-08-050
Budget: 05/01/09 - 04/30/10

DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted inside the human body. Currently, it is difficult to communicate with devices implanted within the human body and the present commercial technologies do...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 08-1
Budget: 01/01/08 - 12/31/08

We shall develop wide temperature range DC-DC boost converters that can be fabricated using commercial CMOS foundries. The boost converters will increase the low voltage supply (~ 0.7 to 3V) of an advanced CMOS integrated circuit to the higher values (3-10V) required for integrated command/control/drive electronics for sensors, actuators and ins...

Phase 1 STTR

Institution: Arizona State University

Agency: Defense Advanced Research Projects Agency
Topic: ST071-007
Budget: 09/12/07 - 08/28/08

Simulations of high performance silicon-on-insulator (SOI) MESFETs show that they can be used for ultra-low power (ULP) radio frequency electronics with power added efficiencies (PAE) that are 10 times higher than existing solutions. The high PAE comes from the enhanced voltage swing that the MESFETs can tolerate (5-50V) compared to current VLSI...

Phase 1 SBIR

Agency: Department of Health & Human Services
Topic: PA-06-20
Budget: 05/01/07 - 10/31/07

DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a transmitter implanted inside the human body. Currently, it is difficult to communicate with devices implanted within the human body and the present commercial technologies do not fill ...

Phase 1 SBIR

Agency: National Aeronautics and Space Administration
Topic: 06-1
Budget: 01/01/06 - 12/31/06

We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs). Our technology allows MESFETs to be fabricated using commercial SOI CMOS foundries with no expensive changes to the process flow. The MESFETs are radiation tolerant and the use of SOI...

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