SP3 Corp.

2220 Martin Ave.
Santa Clara, CA 95050
http://www.sp3inc.com
48 Employees

SBIR Award Summary

Total Number of Awards 6
Total Value of Awards $2.4MM
First Award Date 07/19/04
Most Recent Award Date 06/15/09

Key Personnel

Last Name Name Awards Contact
Zimmer Mr. Jerry W. Zimmer 6 Message
Herlinger Mr. Jim Herlinger 1 Message

6 Awards Won

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA07-026
Budget: 06/15/09 - 06/15/11

Existing electro-optical systems of missile interceptor kill vehicles and/or seeker satellites typically use long wave infrared sensor systems and illumination devices that have optical components which would benefit from improved transmission efficiency at critical IR wavelengths. These components must also operate in potentially harsh environm...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA07-026
Budget: 02/13/08 - 08/13/09

The objective of this proposal is to demonstrate a diamond based thermal heatspreader with high thermal conductivity and CTE matching to any type of semiconductor device such as GaAs or other III-V compound laser diodes. This structure is constructed from layers of diamond and metals so the morphology is identical at any point on the surface and...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA07-026
Budget: 02/13/08 - 08/13/09

The objective of this proposal is to demonstrate the feasibility of producing large diamond IR windows with transmission levels above 95% without the use of traditional AR coatings. The windows will have structured surfaces that create diffractive or negative index optical surfaces that will substantially eliminate reflections at IR wavelengths.

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA04-111
Budget: 06/23/06 - 06/30/09

This proposal is to demonstrate the feasibility of producing GaN-based semiconductor devices on a high thermal conductivity silicon-on-diamond (SOD) substrate where the substrate is a sandwich of silicon, diamond and silicon. Semiconductor power devices for radar applications are limited in performance and end-of-life (EOL) reliability due to hi...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA04-111
Budget: 03/11/05 - 09/11/05

The purpose of the proposed research will be to develop GaN molecular beam epitaxy on SOD (silicon/diamond/silicon) substrates up to 4 inches in diameter. This unique substrate/epilayer combination will provide electronic materials suitable for high-power and opto-electronic devices without the commonly observed limitations due to the production...

Phase 1 STTR

Institution: University of California, Berkeley

Agency: Missile Defense Agency
Topic: MDA04-T018
Budget: 07/19/04 - 01/19/05

The purpose of the proposed research is to develop GaN molecular beam epitaxy on diamond substrates up to 3 inches in diameter. This unique substrate/epilayer combination will provide electronic materials suitable for high-power and opto-electronic devices without the commonly observed limitations due to the production of excess heat during devi...