Sensor Electronic Technology, Inc.

195 Atlas Road
Columbia, SC 29209
http://www.s-et.com
85 Employees

SBIR Award Summary

Total Number of Awards 60
Total Value of Awards $15.5MM
First Award Date 10/03/02
Most Recent Award Date 07/18/14

60 Awards Won

Phase 1 SBIR

Agency: Navy
Topic: N141-040
Budget: 07/18/14 - 01/14/15

WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers radical device performance improvement over MEMS, pin-diode and other switch types due to an extremely high electron sheet density, high electron ...

Phase 1 SBIR

Agency: Air Force
Topic: AF131-166
Budget: 06/05/13 - 03/05/14

ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrate. SET Inc patented GaN MISHFET technology offers radical device performance improvement over SiC MOSFETs and other device types in terms of transc...

Phase 1 SBIR

Agency: Navy
Topic: N121-090
Budget: 05/07/12 - 03/08/13

We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate heterostructure field-effect transistor (MISHFET) is based on innovative and patent-pending composite-channel design, which monolithically integrates n...

Phase 1 SBIR

Agency: Army
Topic: A11-110
Budget: 12/20/11 - 06/20/12

Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electrical and data transfer characteristics will be investigated theoretically and experimentally

Phase 2 STTR

Institution: Rensselaer Polytechnic Institute

Agency: Missile Defense Agency
Topic: MDA09-T001
Budget: 09/21/11 - 09/23/13

This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for the growth of the heterostructures with the lattice-matching ability of the AlInN alloy, it is expected that the defect density in the eventual HFET...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: MDA08-024
Budget: 09/20/10 - 09/20/12

SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVD® growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and t...

Phase 1 STTR

Institution: Rensselaer Polytechnic Institute

Agency: Missile Defense Agency
Topic: MDA09-T001
Budget: 05/03/10 - 11/02/10

SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial...

Phase 1 SBIR

Agency: Navy
Topic: N093-200
Budget: 04/13/10 - 10/21/10

We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and technology. Using recent achievements in the epilayer gro...

Phase 1 SBIR

Agency: Department of Agriculture
Topic: 8.13-2010
Budget: 01/01/10 - 12/31/10

We propose developing, manufacturing, fielding and validating environmentally friendly, energy efficient revolutionary ultraviolet irradiation devices (UID) to improve nutritional value of greenhouse crops. UIDs will be based on a new technology to produce deep ultraviolet semiconductor Light Emitting Diodes (DUV LEDs) with emission wavelengths ...

Phase 1 SBIR

Agency: National Science Foundation
Topic: N1-2010
Budget: 01/01/10 - 12/31/10

This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral range (280 nm to 320 nm). A variety of optical sensing applications that require high power density with a highly localized spatial emission will ben...

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