Spinnaker Semiconductor

Room 527 Shepherd Labs, 100 Union St. SE
Minneapolis, MN 55455
5 Employees

SBIR Award Summary

Total Number of Awards 4
Total Value of Awards $1.05MM
First Award Date 05/12/99
Most Recent Award Date 04/12/06

Key Personnel

Last Name Name Awards Contact
Snyder Dr. John Snyder 4 Message

4 Awards Won

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA05-029
Budget: 04/12/06 - 10/13/06

Spinnaker Semiconductor proposes the development of a rad-hard 20 Msps 14 bit analog-to-digital converter based-on Spinnaker's SB-CMOS technology. Spinnaker intends to use their in-house 2D Monte-Carlo device simulator (WHITECAP) to quantify the effect of a high energy ion strike to a SB-MOS device. WHITECAP will also be used to engineer and o...

Phase 2 SBIR

Agency: Missile Defense Agency
Topic: BMDO99-005
Budget: 03/31/03 - 05/26/04

Spinnaker Semiconductor, in partnership with Lincoln Labs in Lexington, Massachusetts, will demonstrate 25nm physical gate length NMOS and PMOS devices based on Schottky source/drain technology. Spinnaker's patent-protected Schottky Barrier (SB) CMOS technology is a fundamental and strategic leap forward for the entire high-performance silicon C...

Phase 1 SBIR

Agency: Air Force
Topic: AF00-031
Budget: 05/01/00 - 02/12/01

Spinnaker Semiconductor will develop a low temperature variant of its proprietary Schottky Barrier CMOS (SBCMOS) technology. Cooled, short channel (

Phase 1 SBIR

Agency: Defense Threat Reduction Agency
Topic: DTRA99-004
Budget: 05/12/99 - 12/12/99

Spinnaker Semiconductor will develop its proprietary Schottky barrier CMOS technology (SB-CMOS) for space and other radiation hard environments. SB-CMOS offers a dramatic reduction in parasitic bipolar gain and therefore unconditional immunity to latch-up. It also has greatly increased hardness to node-discharge and other single-event-effects....