Sdphotonics LLC

5749 Aloma Woods
Oviedo, FL 32765
4 Employees

SBIR Award Summary

Total Number of Awards 9
Total Value of Awards $1.95MM
First Award Date 01/10/07
Most Recent Award Date 06/03/15

Key Personnel

Last Name Name Awards Contact
Freisem Dr. Sabine Freisem 9 Message
Zhao Guowei Zhao 1 Message
Deppe Dr. Dennis Deppe 1 Message

9 Awards Won

Phase 2 SBIR

Agency: Army
Topic: A13-057
Budget: 06/03/15 - 06/02/16

The Armys Multiple Integrated Laser Engagement Simulation (iMILES) currently uses a 904.5 nm wavelength laser link along with silicon photodiodes at a receiver (target). Several improvements are expected in the laser link capability with a change from 904.5 nm to the 1550 nm wavelength. One dramatic improvement could be range finding during line...

Phase 1 SBIR

Agency: Army
Topic: A13-057
Budget: 08/15/13 - 02/14/14

A new approach to the Army Tactical Engagement Simulation System (TESS) is proposed to increase the link reliability, increase range, and increase the amount of data that can be transferred. The new technology uses both laser sources and detectors with improved propagation properties that meet eye-safety requirements, and meet the cost requireme...

Phase 1 SBIR

Agency: Defense Advanced Research Projects Agency
Topic: SB122-005
Budget: 10/29/12 - 07/31/13

A new facet coating material for high power diode lasers will be developed that reduces interface states at the cleaved facet and increases facet cooling. The facet coating is expected to be more robust and lead to increased power and brightness in high power diode lasers, bars and stacks. The facet coating technique makes use of commercial proc...

Phase 1 STTR

Institution: University of Central Florida

Agency: Navy
Topic: N12A-T003
Budget: 08/15/12 - 03/15/13

High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 µm diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by...

Phase 1 SBIR

Agency: Air Force
Topic: AF112-056
Budget: 03/01/12 - 03/01/13

ABSTRACT: A new active material will be developed and tested to improve reliability for space applications. Recent improvement in facet reliability reveals that bulk failure mechanisms could limit laser diodes used in space. Radiation-induced defects are expected to occur in the bulk of the laser diode gain material because of its active volume....

Phase 1 SBIR

Agency: Army
Topic: A08-139
Budget: 12/15/08 - 06/15/09

This SBIR proposal is to develop a new high power VCSEL array that can achieve higher efficiency and higher brightness than existing technology, suitable for pumping eye-safe fiber lasers. The technology uses a lithographically defined VCSEL process to achieve dense integration and reduce the diode electrical resistance and optical loss to incre...

Phase 2 SBIR

Agency: Air Force
Topic: AF071-237
Budget: 06/23/08 - 10/30/10

The proposed Phase II effort will extend the Phase I results to use new quantum dot laser diode designs based on increased cavity size and low internal optical loss to increase pulse energy over existing demonstrations. An integrated optical amplifier will be developed based on the same quantum dot gain material for further power increase. Submo...

Phase 1 SBIR

Agency: Air Force
Topic: AF071-237
Budget: 05/31/07 - 02/29/08

We propose to research and develop a new type of quantum dot (QD) mode-locked laser based on new active region and cavity designs. The cavity design will use a low loss QD/waveguide active region combined with index confinement through selective oxidation to enable cavity lengths greater than 1.5 cm that retain high optical extraction efficiency...

Phase 1 SBIR

Agency: Air Force
Topic: AF063-003
Budget: 01/10/07 - 10/31/07

Experimental and theoretical evidence indicate that charge localization through a quantum dot active region can significantly increase pump laser diode performance by reducing threshold current density and internal loss. Because of its charge localization and lower operating current density, quantum dot active material has demonstrated increased...