IRDT Solutions, Inc.

20422 Beach Blvd Unit 310
Huntington Beach, CA 92648
1 Employee

SBIR Award Summary

Total Number of Awards 6
Total Value of Awards $989K
First Award Date 07/02/10
Most Recent Award Date 09/30/15

Key Personnel

Last Name Name Awards Contact
Vydyanath Honnavalli Vydyanath 5 Message
Vydyanath Dr. Honnavalli Vydyanath 2 Message

6 Awards Won

Phase 1 SBIR

Agency: Army
Topic: A15-024
Budget: 09/30/15 - 03/29/16

Phase I work will focus on demonstrating the feasibility of our approach to significantly reduce the Shockley-Read related centers in Long wavelength HgCdTe and increase the minority carrier lifetime so that the dark currents can be controlled to less than 3E-6 Amps/cm2 at > 90 K for a cut-off wavelength larger than 10 microns and in addition...

Phase 2 SBIR

Agency: Army
Topic: A12-024
Budget: 09/06/13 - 10/24/13

The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR HgCdTe epitaxial layers grown on Si substrates wit...

Phase 1 STTR

Institution: Rensselaer Polytechnic Institute

Agency: Missile Defense Agency
Topic: MDA12-T003
Budget: 10/29/12 - 04/30/13

Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice detectors. Phase I goal is to demonstrate the feasibility of our technology to fabricate photodiodes with cut-off wavelength in excess of 10µm, quant...

Phase 1 SBIR

Agency: Army
Topic: A12-024
Budget: 05/06/12 - 11/02/12

Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers grown on 3 inch diameter Si substrates and to demon...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA10-009
Budget: 06/27/11 - 12/30/11

Phase I work will focus on demonstrating the feasibility of our proposed approach to fabricate type-II strained-layer superlattice FPAs based on III-V materials with improved state of the art in performance. Phase II effort will be directed at validating the approach with demonstration of large format arrays.

Phase 1 SBIR

Agency: Army
Topic: A10-022
Budget: 07/02/10 - 01/02/11

Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phase II plan entails building and delivering the annealing apparatus to anneal 3-inch large HgCdTe wafers.