Sinmat, Inc.

1912 NW 67th Place Array
Gainesville, FL 32653
http://www.sinmat.com
23 Employees

SBIR Award Summary

Total Number of Awards 42
Total Value of Awards $12.8MM
First Award Date 01/01/02
Most Recent Award Date 07/06/16

Key Personnel

Last Name Name Awards Contact
Singh Rajiv Singh 10 Message
Lahiri Syamal Lahiri 4 Message
Dufourg Marie Dufourg 1 Message
Mishra Abhudaya A. Mishra 1 Message
Kumar Purushottam Kumar 2 Message
Arjunan Arul Arjunan 6 Message
Singh Dr. Deepika Singh 36 Message

42 Awards Won

Phase 1 SBIR

Agency: Army
Topic: A16-021
Budget: 07/06/16 - 01/05/17

The low cost manufacturing of high quality, electronic grade single crystal and poly crystal diamond wafer depends on development of scalable, defect reduction growth and polishing methods. Sinmat has developed novel scalable polishing methods that create damage free surface and eliminate sub-surface damage. By working together with leaders in ...

Phase 1 SBIR

Agency: Department of Energy
Topic: 11a
Budget: 06/08/15 - 03/07/16

Current gallium nitride bulk substrate finishing process technology yields poor structural quality of surfaces. The current process takes longer time and results in defective surface. The wafering process needs to be improved to achieve high performance GaN devices. A novel rapid, mechanical and chemical mechanical process will be explored to ra...

Phase 2 STTR

Institution: University of Florida

Agency: Missile Defense Agency
Topic: MDA12-T003
Budget: 02/28/14 - 02/26/16

Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid comme...

Phase 2 SBIR

Agency: Air Force
Topic: AF121-183
Budget: 12/05/13 - 03/09/16

ABSTRACT: Silicon carbide based power devices has several advantages because it can be used in very high power, high temperature, high frequency applications, where conventional silicon devices cannot be used. Despite significant advancement in SiC semiconductor technology in the past 3 decades, the presence of device killing defects in the epil...

Phase 2 SBIR

Agency: Army
Topic: A11-030
Budget: 02/07/13 - 06/07/15

Next generation infra-red focal plane array applications for night vision systems require high quality, large area HgCdTe epi-layers. Such layers are only possible with the use of (112) Si substrates that are of high quality with surfaces that are pristine and devoid of defects. However, commercially available (112) Si surfaces typically have th...

Phase 1 SBIR

Agency: National Science Foundation
Topic: NM-2012
Budget: 01/01/13 - 12/31/13

This Small Business Innovation Research Phase I project deals with development of a low-cost manufacturing process for high-efficiency patterned sapphire substrates for cheaper and more energy-efficient light emitting diodes (LEDs). Patterned sapphire substrates have been found to improve the quality of gallium nitride epi-layers and enhance the...

Phase 2 SBIR

Agency: Department of Energy
Topic: 31A-2013
Budget: 01/01/13 - 12/31/13

Diamond possesses excellent particle detection characteristics, which makes it indispensible for its use in the radiation hard ultra-fast detectors for high energy physics applications. For such applications, damage free, ultra-smooth chemical vapor deposition diamond substrates of large area are required. Though large area polycrystalline dia...

Phase 1 STTR

Institution: University of Florida

Agency: Missile Defense Agency
Topic: MDA12-T003
Budget: 11/01/12 - 04/30/13

Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid comme...

Phase 1 SBIR

Agency: Air Force
Topic: AF121-183
Budget: 07/18/12 - 04/20/13

ABSTRACT: Silicon carbide electronics technology has several advantages over conventional silicon electronics and it finds its application in several power electronics applications. However, the manufacturing of reliable SiC power devices is a critical challenge because of the degradation of the forward current gain or voltage drop attributed to...

Phase 2 SBIR

Agency: Department of Energy
Topic: 45 B-2012
Budget: 01/01/12 - 12/31/12

Diamond crystals with small total thickness variation (TTV) and local thickness variation (LTV) values are needed for position sensitive fast particle detectors for particle tracking/timing, and detecting direct/indirect beams. The fabrication of ultra-flat, low surface defectivity diamond detectors represents a major technological challenge. Al...

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