Velox Semiconductor Corporation

394 Elizabeth Avenue
Somerset, NJ 08873
20 Employees

SBIR Award Summary

Total Number of Awards 2
Total Value of Awards $169K
First Award Date 03/27/09
Most Recent Award Date 06/29/09

Key Personnel

Last Name Name Awards Contact
Pophristic Milan Pophristic 2
Hierl Thomas Hierl 1

2 Awards Won

Phase 1 STTR

Institution: Rensselaer Polytechnic Institute

Agency: Navy
Topic: N09-T023
Budget: 06/29/09 - 04/30/10

The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team i...

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA08-029
Budget: 03/27/09 - 09/27/09

GaN (Gallium Nitride) High Electron Mobility Transistor (HFET) devices face severe thermal control problems as a result of high power densities which result from the need for more power and the ongoing reduction in geometries of individual devices. The device lattice temperature increases under high power causing several detriment effects: a) Th...