Awards

$149K

Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems

Phase 1 SBIR

Agency: Navy
Topic: N06-119
Budget: 11/08/06 - 01/05/08
PI: Dr. Edwin Piner

Nitronex will use baseline GaN HEMT process (NRF1) to demonstrate feasibility of broadband 35-40W solid-state PA with >35% efficiency across 225-3200MHz frequency range required by the program. Nitronex will establish feasibility by (a) reducing thermal resistance of current generation device layout through thermal simulation (b) modifying CFET...

$100K

AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

Phase 1 STTR

Institution: University of Florida

Agency: Missile Defense Agency
Topic: MDA06-T012
Budget: 08/28/06 - 02/22/07
PI: Dr. Edwin Piner

In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications; specifically, AlGaN/GaN FETs have much higher p...

$69.9K

High Linearity-High Efficiency Power Amplifiers Based on Digital Signal Processing Techniques and Wide Bandgap Devices

Phase 1 STTR

Institution: North Carolina State University

Agency: Navy
Topic: N06-T009
Budget: 08/01/06 - 05/31/07
PI: Mr. Walter Nagy

Nitronex Corporation proposes to demonstrate the feasibility of building a DPD system implementing adaptive gate bias control and signal insensitive correction for enhancing the power added efficiency of a 150W GaN based amplifier under OFDM signaling.BENEFITS: Work will result in a high power, broad band, highly linear, light-weight power ampli...

$401K

High IP3 AlGaN/GaN HEMT LNAs on Silicon

Phase 2 STTR

Institution: University of Michigan

Agency: Navy
Topic: N00-T006
Budget: 08/30/01 - 08/29/03
PI: Dr. Kevin Linthicum

The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-silicon, Nitronex now proposes to advance the technology towards fabrication and commercialization of X-band High IP3 AlGaN/GaN HEMT Low Noise Amplif...

$65K

Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO01-014
Budget: 05/01/01 - 10/30/01
PI: Dr. Kevin Linthicum

Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree of device integration possible resulting in system level improvements in military (power transmis...

$65K

Pendeoepitaxy of III-Nitride Based Photodiodes for Solar Blind UV Detection and Imaging

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: BMDO00-003
Budget: 07/07/00 - 01/07/01
PI: Dr. Mark Johnson

Nitronex, in collaboration with North Carolina State University (NCSU), proposes to develop the world's first pendeoepitaxy grown aluminum gallium nitride (AlGaN) short wavelenth / solar blind UV heterojunction photodetector. During Phase 1, epitaxial layers for photodiode detector structures based on our proprietary pendeoepitaxy process will ...

$100K

Nitride Semiconductor Substrates

Phase 1 STTR

Institution: North Carolina State University

Agency: Navy
Topic: N00T006
Budget: 06/02/00 - 12/02/00
PI: Dr. Kevin Linthicum

Nitronex (www.nitronex.com) and NC State University will develop Pendeo crystal growth for large area / low cost Gallium Nitride on Silicon substrates for use in integrated electronic device application. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree of dev...

$65K

Development of III-V Nitride Diode Arrays for UV Imaging Applications

Phase 1 STTR

Institution: North Carolina State University

Agency: Missile Defense Agency
Topic: BMDO99T001
Budget: 10/28/99 - 04/20/00
PI: Dr. Mark Johnson

Nitronex, in collaboration with the Solid State Physics Laboratory (SSPL) at North Carolina State University, proposes to develop the world's first UV-specific focal plane array (FPA) imager or camera by integrating III-nitride heterojunction detectors with available FPA readout devices on silicon. During Phase 1, a 32x32 diode array and readou...