Awards

$99.7K

Cost Effective Manufacturing of Device Quality Large Diameter InSb

Phase 1 SBIR

Agency: Air Force
Topic: AF06-212
Budget: 06/21/06 - 07/29/07
PI: Dr. Peter Chow

SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular,optical detection and tracking of missiles. Ion-b...

$99.7K

Next Generation Solar Cells Based on Nanostructures

Phase 1 SBIR

Agency: Air Force
Topic: AF06-274
Budget: 04/07/06 - 04/17/07
PI: Dr. Aaron Moy

Increased power demands on satellites and remote instruments drive the need for achieving higher conversion efficiencies from solar cells with less weight and volume. Of great current interest is the ability to create nanoscale structures, with device properties that can be uniquely engineered. Quantum dot-based photovoltaics have been demonst...

$100K

Improvement of Type II Superlattices by H-Plasma

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA05-007
Budget: 04/04/06 - 10/31/06
PI: Dr. Aaron Moy

SVT Associates proposes an innovative atomic Hydrogen enhanced growth and surface preparation technique for high performance Type-II superlattice focal plane array fabrication. This material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. Photodetector arrays using this material are o...

$69.8K

Phased Array Antennas on Large Area Substrates

Phase 1 SBIR

Agency: Army
Topic: A05-026
Budget: 11/18/05 - 05/18/06
PI: Dr. Andrei Osinsky

In the Phase I program an inovative approach to modeling and fabrication of integrated phase array antennas is proposed. The approach uses advantages of implementing scientific modeling and simulation on EM Premier workstation which enables a full 3D FDTD algorithm.The feasibility of integration of BST with large area Si wafers will be explored ...

$730K

ZnO Based Light Emitters for UV/Blue Applications

Phase 2 SBIR

Agency: Army
Topic: A04-068
Budget: 11/07/05 - 11/06/07
PI: Dr. Andrei Osinsky

This Phase II SBIR project addresses the development of novel solid state Zinc Oxide-based light emitting device. These devices will find widespread application in civilian and military markets. The objective of the Phase II is to develop UV/Blue emitters using the CdZnO/ZnO material system. SVT Associates utilize innovative approaches for mater...

$99.9K

High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Phase 1 STTR

Institution: University of Illinois, Urbana-Champaign

Agency: Army
Topic: A05-T008
Budget: 08/15/05 - 02/11/06
PI: Dr. Amir M. Dabiran

A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications includin...

$99.9K

Advanced Fabrication Techniques for Type-II Superlattice VLWIR Detectors

Phase 1 SBIR

Agency: Missile Defense Agency
Topic: MDA04-135
Budget: 02/28/05 - 11/28/05
PI: Dr. Brian Hertog

The growth and fabrication of nanostructures, particularly short period Type-II superlattices, rely on high quality crystalline materials. Defects and non-planarities on the substrate surface and non-uniformities in the epitaxial layers can impair device performance. Gallium antimonide (GaSb) substrates have utility in exploring new III-V allo...

$120K

AlInGaN-based Transistors for Advanced Applications

Phase 1 SBIR

Agency: Army
Topic: A04-048
Budget: 12/17/04 - 06/17/05
PI: Dr. Andrei Osinsky

Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed ...

$120K

ZnO Based Light Emitters for UV/Blue Applications

Phase 1 SBIR

Agency: Army
Topic: A04-068
Budget: 12/08/04 - 06/08/05
PI: Dr. Andrei Osinsky

This Phase I SBIR project addresses the development of novel solid state Zinc Oxide-based light emitting device. These devices will find widespread application in civilian and military markets. The objective of the Phase I effort is to explore CdZnO/ZnO material system for UV emitters. SVT Associates will be utilizing innovative approaches for m...

$99.8K

Low-Noise Avalanche Photodiodes for Mid-IR Applications

Phase 1 STTR

Institution: Columbia University

Agency: Air Force
Topic: AF04-T021
Budget: 09/30/04 - 06/30/05
PI: Dr. Aaron Moy

Avalanche photodiodes (APDs) are the detector of choice for low noise, high speed, high sensitivity photodetectors. Applications in the mid-IR (3-5 micron) include optical trace gas detection, LADAR, quantum cryptography and targeting countermeasures. Currently there are no commercially available APDs operating in this wavelength range. To ad...

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