Awards

$1.5MM

GaN Substrate Technology

Phase 2 SBIR

Agency: Advanced Research Projects Agency - Energy
Topic: 2013
Budget: 01/01/14 - 12/31/14
PI: Jacob Leach

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negat...

$80K

Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE

Phase 1 SBIR

Agency: Navy
Topic: N131-068
Budget: 05/21/13 - 03/07/14
PI: Edward Preble

Gallium Nitride (GaN) crystals have recently garnered attention as a candidate for use as a Quasi-Phase Matching (QPM) material for frequency conversion applications such as second harmonic generation (SHG) and optical parametric oscillation (OPO), due to its wide bandgap (3.4eV), high thermal conductivity (220-260 W/m-k), and wide transparency ...

$150K

Low Cost High Reproducibility Method for GaN Seed Production

Phase 1 SBIR

Agency: Department of Energy
Topic: 11 A-2013
Budget: 01/01/13 - 12/31/13
PI: Edward Preble

Although several critical energy saving technologies under development today require Gallium Nitride (GaN) based semiconductor devices, a source of high quality and inexpensive GaN wafers does not yet exist. This lack of GaN wafers adds complexity to GaN device production and makes development of new GaN device based products slower and more cos...

$140K

FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

Phase 1 SBIR

Agency: Department of Energy
Topic: 11 B-2013
Budget: 01/01/13 - 12/31/13
PI: Edward Preble

Gallium Nitrides (GaN) device market size is second only to silicon and is projected to be $50-100 billion in size as markets mature for GaN power devices, solid state lighting, and hundreds of other new applications. Even with this remarkable forecast, GaN epitaxy is still produced primarily on foreign (non-GaN) substrates, typically sapphire, ...

$100K

High Quality, Low Cost, and High Purity AlGaN Epitaxy with Reduced Surface Dislocation Density

Phase 1 STTR

Institution: North Carolina State University

Agency: Army
Topic: A12A-T019
Budget: 09/13/12 - 03/12/13
PI: Kevin Udwary

Aluminum Gallium Nitride (AlGaN) has broad dual use applications for power transistors, high frequency transistors, high power Schottky barrier diodes, and solar-blind detectors, as well as ultra-violet laser diodes and ultra-violet light emitting diodes. This unique material system spans the capabilities that lie between Gallium Nitride (GaN) a...

$100K

High Performance, Cost Effective, Planar Molecularly Controlled Semiconductor Resistor (MOCSER) Gas Sensors on InAs and InN

Phase 1 STTR

Institution: Duke University

Agency: Army
Topic: A12A-T014
Budget: 09/13/12 - 03/12/13
PI: Bob Metzger

We plan to implement a planar Molecularly Controlled Semiconductor Resistor (MOCSER) gas sensor on both InAs and InN platforms for the ppt-ppm detection of NOx and H2O. Kyma Technologies and Duke University will leverage Duke s leading MOCSER based NOx sensor technology which uses surface functionalization of InAs with hemin (chloroprotoporphyr...

$399K

Development of GaN Substrates for High Power and Multi-Functional Devices

Phase 2 SBIR

Agency: Army
Topic: A09-045
Budget: 08/07/12 - 08/06/14
PI: Gregory Mulholland

Gallium nitride (GaN) substrates are a critical component in the roadmap of power efficient and high frequency electronic devices in the coming years. One major hurdle of this technology is the limited availability of large diameter, high quality substrates for large scale device fabrication. Under this effort, Kyma will work with partners to pr...

$80K

Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications

Phase 1 SBIR

Agency: Navy
Topic: N121-090
Budget: 05/07/12 - 03/08/13
PI: Jacob Leach

In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), Design and simulation of Power Devices and systems (NextWatt LLC), Epitaxial Growth of High Performance HEMT heterostructures (Virginia Commonwealth University), and Fabrication of Advanced Semiconductor Devices (The Pennsylvania State University). The e...

$80K

Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

Phase 1 SBIR

Agency: Navy
Topic: N112-167
Budget: 10/11/11 - 08/10/12
PI: Jacob Leach

In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), High Indium Mole Fraction InGaN and quaternary AlInGaN growth (NCSU- Salah Bedair), device fabrication and characterization (NCSU- John Muth), Optical Photopumping (ARMDEC- Henry Everitt) and expertise in underwater optical communications (NCSU- John Mut...

$1000K

Producibility of Gallium Nitride Semiconductor Materials

Phase 2 STTR

Institution: Pennsylvania State University

Agency: Missile Defense Agency
Topic: MDA09-T001
Budget: 10/01/11 - 09/30/13
PI: Bob Metzger

The overall objective of this program is to improve the producibility of HVPE GaN through the use of in-situ monitoring during the growth process. Various in-situ monitoring devices will be used: a UV absorption technique to monitor the GaCl concentration above the growing GaN wafer; a commercial BandiT system capable of measuring optical emiss...

Load More