Surfactant Enhanced Growth of High Quality Gallium Nitride (GaN) on Silicon for RF Power Amplifiers

Period of Performance: 02/01/2003 - 07/31/2003

$70K

Phase 1 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Abstract

The wide bandgap material GaN is ideally suited for high power and high temperature electronics. Potential applications include high power devices such as amplifiers, mobile digital, point-to-point and satellite communications, wireless area networking (WAN), high temperature sensor and electronics for combustion control, and electronic actuators. An investigation into the feasibility of the growth of high quality GaN on surfactant treated silicon substrates is proposed. Unlike substrates currently used for the fabrication of GaN-based devices, large diameter silicon substrates are readily available. Since device throughput is proportional to the square of the wafer diameter this approach could significantly lower production costs. Such a silicon-based wafer platform could also provide the advanced architecture for integration of GaN-based devices into silicon circuits. Larger substrates will produce significantly less expensive devices such as HEMT and amplifiers for a variety of applications including radar systems and consumer electronics.