A Radiation Hard Self Bias Low Noise Amplifier

Period of Performance: 07/09/2003 - 07/19/2004

$100K

Phase 1 SBIR

Recipient Firm

TLC Precision Wafer Technology, Inc.
1411 West River Road, North
Minneapolis, MN 55411
Principal Investigator

Abstract

Current military and commercial communication systems at lower frequencies experience spectrum crowding, and does not have wide bandwidths needed for high data rates. Broadband Low Noise Amplifiers (LNA) are crucial components in any receiver system. Although a wide variety of LNAs are currently available in the frequency bands below 50 GHz, little development has occurred in the 49 to 52 GHz range. Future satellite communication systems are in need of radiation hard, reliable LNAs in this frequency range. The TLC proposed wide band LNA takes advantages of the patented substrate engineering technologies, design, and microfabrication capabilities to develop a radiation hard amplifier capable of providing a flat gain, for temperatures of -40° C to +80° C, using InP PHEMT technology. This proposed project results in a wide band high gain, low noise figure, Low Noise Amplifier, which is needed in the present and future communication receivers. Applications include several military systems such as SATCOM (satellite communiation) systems. This LNA is also very useful in the transceivers of missile seeker, collusion avoidance radars, etc.