An Indium Gallium Arsenide Focal Plane Array for Multiple Purpose Imaging from the Visible through the Short Wave Infrared

Period of Performance: 06/26/2003 - 12/26/2003


Phase 1 SBIR

Recipient Firm

Sensors Unlimited, Inc.
3490 Route 1, Building 12
Princeton, NJ 08540
Principal Investigator


We will design, develop and deliver a 25x25 pixel indium gallium arsenide (InGaAs) focal plane array (FPA) that satisfies or exceeds all of the technical requirements of this solicitation. The use of a substrate-removed InGaAs photodiode array will exhibit high quantum efficiency from 0.4 µm through 1.7 mm. The FPA will thus be usable both for visible imaging and for the imaging of the eye-safe lasers (wavelengths longer than 1.4 mm) mandated in many BMD applications. In addition, the use of the InP/InGaAs material system provides inherent radiation hardness. Neither of these is possible with silicon-based CMOS or CCD imagers. The FPA will feature 10 mm pixels, inter-pixel crosstalk less than 1%, a dynamic range greater than 1000:1, and staring-mode readout as well as the ability to address individual pixels. The bandwidth when reading out individual pixels will exceed 1 GHz. During Phase I, we will demonstrate a full-performance 3x3 pixel photodiode array. During Phase II, we will develop and deliver a 25x25 pixel focal plane array consisting of an InGaAs photodiode array integrated with a CMOS readout integrated circuit. Also during Phase II, we will demonstrate a resonant cavity architecture that maximizes the quantum efficiency in a narrow wavelength band. The output of this program will be a high speed, high dynamic range, and low crosstalk focal plane array with optical response from the visible through the short wave infrared. Important commercial applications include laser beam profiling, free space communications, and nondestructive testing.