Infra-red Avalanche Photodiode Detectors (APD) for Laser Communications

Period of Performance: 07/09/2003 - 07/19/2004

$100K

Phase 1 SBIR

Recipient Firm

Inphot, Inc.
13, Blossom Hill Drive
Plainsboro, NJ 08536
Principal Investigator

Abstract

InPhot Inc proposes to develop the enabling material and device technology for the realization of low noise, large area, high quantum efficiency infrared Avalanche Photodiode Detectors (APD) sensitive in the 1064 nm to 1550 nm spectral region for laser communication. We will achieve this by performing device designs to determine suitable material structures, epitaxial growth and device fabrication processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of low noise, large area, high quantum efficiency infrared avalanche photodiode detectors sensitive in the 1064 nm to 1550 nm spectral region by developing techniques to lower the impact ionization co-efficient, lower dark current that would prevent the edge break down and develop strategies for high quantum efficiency and high speed operation. In addition the Phase I effort projects the detector performance that can be realized from the proposed detectors through material and device designs. In Phase II, we will further optimize the material structures and design and fabricate infrared avalanche photodetectors and segmented or multi-element detectors based on them. This project will result in two products: infrared large area avalanche photodetectors in the 1064 nm - 1550 nm spectral band and the avalanche photodetector arrays. This project will result in two products: infrared large area avalanche photodetectors in the 1064 nm - 1550 nm spectral band and the avalanche photodetector arrays. The photodetectors will be applicable in missile seekers, battlefield target identification and recognition systems, and eyesafe LADAR. Civilian applications include fiberoptic telecommunications, remote sensing and laser spectroscopy.