Graphene Memory Device

Period of Performance: 06/28/2012 - 03/29/2013


Phase 1 SBIR

Recipient Firm

Advanced Photon Sciences, LLC
PO Box 1567
Williston, VT 05495
Principal Investigator


ABSTRACT: A need exists for a reliable, low cost radiation-hardened digital memory in aerospace and defense applications and in long-life, high-speed memory for terrestrial and commercial applications. Present offerings can accomplish the objective, but only at the expense of performance, power, size, and weight with device redundancy and shielding. Recent focus on Graphene and its capabilities has inspired a flurry of research and exploration. Graphene is maturing quickly from its discovery and has exhibited a number of best of breed characteristics including conductivity, stability, and as a Hall Effect sensor material. It is generally agreed that Graphene is potentially the best material for many integrated circuit components; however the evolution of compatible process and large area, defect-free layers of the material has been elusive to this point. Our goal to incorporate Graphene as a critical element of a radiation hardened memory device will be done with a demand on par with present capabilities and will only strengthen as the underlying manufacturing of Graphene matures into modern devices. Further, we propose to research a method to bridge the gap between present laboratory-based Graphene coating efforts and the needs of the commercial market with a unique monolayer deposition method using unique monolayer deposition method using equipment and process which APS has been developing for VersuFLEX Technologies LLC. BENEFIT: This technology has immediate application in critical aviation electronics applications. It also poses a much needed improvement in lifetime for solid state drives in the commercial market.