Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits

Period of Performance: 05/01/2012 - 11/01/2012


Phase 1 SBIR

Recipient Firm

Sundew Technologies, LLC
340 Industrial Lane Unit 7
Broomfield, CO -
Principal Investigator


This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.