Development of High Performance SLS Epi Materials for IR FPA Applications

Period of Performance: 02/01/2012 - 07/31/2012

$100K

Phase 1 SBIR

Recipient Firm

IntelliEPI IR, Inc.
201 E. Arapaho Road, Suite 210 Array
Richardson, TX 75081
Principal Investigator

Research Topics

Abstract

This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The epitaxy development effort will focus on improving QE, reducing dark current, and reducing defects. The device design will be based on the NASA-JPL CBIRD structure. Advanced dual-band LW/LW design based on CBIRD will also be explored.