Defect Passivation for High Performance HgCdTe on Si

Period of Performance: 09/30/2011 - 03/31/2012

$100K

Phase 1 STTR

Recipient Firm

EPIR, Inc.
590 Territorial Drive
Bolingbrook , IL 60440
Firm POC
Principal Investigator

Research Institution

University of Illinois, Chicago
809 S Marshfield RM 608
Chicago, IL 60612
Institution POC

Abstract

Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-generated species outside the discharge area. The reduced reactivity of the afterglow plasma will maintain the IRFPA integrity while a nozzle specially designed to generate a supersonic flow and used to extract the hydrogen species increases the static pressure and axial velocity, thereby enhancing the uptake of passivants.