Development of III-Nitride Based 280 nm Lasers

Period of Performance: 05/05/2011 - 11/07/2011


Phase 1 SBIR

Recipient Firm

MP Technologies, LLC
1801 Maple Avenue Advanced Coating Technology Group
Evanston, IL 60201
Principal Investigator


Unfortunately, existing AlGaN based ultraviolet laser diodes with wavelengths much shorter than 340 nm suffer from poor performance. This is partially due to the fact that most of the existing research has focused on growth of InGaN lasers on GaN based templates, but a large part is also due to material and processing issues unique to deep UV lasers. New approaches to achieving III-Nitride 280 nm lasers are needed to meets the Navy s ambitious goals laid out in this program; it is unlikely that traditional approaches to III-Nitrides will be able to achieve the desired laser performance. Instead it is necessary to develop revolutionarily novel approaches to the growth and fabrication of AlInGaN based UV lasers. To this end, we propose a novel hybrid n-ZnO/AlGaN/p-Si 280 nm UV laser. The objective of this Phase I proposal is to investigate novel techniques required to achieve such a hybrid laser. This objective will be complemented by scientific studies to better understand the physical origins existing performance limitations.