Large-Area UV-Selective Silicon-Based Avalanche Photodiodes

Period of Performance: 07/21/2011 - 01/21/2012


Phase 1 SBIR

Recipient Firm

Spire Corp.
One Patriots Park
Bedford, MA 01730
Principal Investigator


This Phase I SBIR proposal aims to develop for the first time high efficiency large-area, low-noise UV avalanche photodiodes on silicon-on-insulator (SOI) structures. These devices will benefit from Spire s patented technology to selectivity detect UV radiation with efficiency levels at greater than 80% while being relatively insensitive to longer visible and near infrared photons. Upon success demonstration of the feasibility of these devices in Phase I, Spire will optimize the design and process parameters and develop devices worthy of government and commercial application.