Solvothermal growth of low-defect-density gallium nitride substrates

Period of Performance: 04/18/2011 - 01/18/2012


Phase 1 STTR

Recipient Firm

Soraa, Inc.
6500 Kaiser Drive
Fremont, CA 94555
Principal Investigator
Firm POC

Research Institution

University of Akron
284 Polsky Building
Akron, OH 44325
Institution POC


ABSTRACT: We propose to develop cost and growth-rate models quantifying the capability for Soraa's proprietary SCoRA ammonothermal reactor and associated procedures to produce bulk GaN with low threading dislocation defect concentrations. The new apparatus and methods will enable major improvements in the growth of ultralow defect bulk GaN crystals in high volumes and modest costs. BENEFIT: Foundational substrate technology for next-generation high-power electronics, ultraviolet detectors, laser diodes, and light-emitting diodes.