High Voltage High Frequency SiC Switch

Period of Performance: 02/25/2010 - 02/24/2012


Phase 2 SBIR

Recipient Firm

Genesic Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Principal Investigator


The stringent power quality, size weight and volume requirements for operating next-generation intelligent power systems (NGIPS) require the development of revolutionary new semiconductor switch technology. The challenging specifications (>20 kHz, >10 kV) demanded by these applications are enabled by fully exploiting the superior electrical and thermal properties of the emerging power semiconductor material of choice: Silicon Carbide. In the Phase I, an innovative SiC device invented recently the SuperJFET, was found to offer the best solution. Extensive analytical and 2D device simulations were conducted to accurately model SiC SuperJFET devices and its performance was verified. Test structures were fabricated to demonstrate critical fabrication steps that enable the realization of high performance SiC devices. Power modules were designed and fabricated that allows reliable packaging and testing of SiC devices. In this Phase II SBIR program, four batches of SiC SuperJFET devices will be designed and fabricated with successively increasing power levels to meet the program objectives. A high volume Silicon Carbide foundry will allow economical production of SuperJFET devices for successful commercialization with DoD prime contractors with high power conditioning systems expertise. A comprehensive military standards test plan will be implemented to enable a successful insertion into SSPS hardware.