Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Soldered Contacts

Period of Performance: 09/29/2009 - 09/29/2011

$729K

Phase 2 SBIR

Recipient Firm

Genesic Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Principal Investigator

Abstract

The extremely challenging speed 10 kV) specifications of High Power Microwave (HPM), Railgun, and Electro-Magnetic Armor circuits require the development of revolutionary new semiconductor switch technology that promises a 3-10X reduction in the series connected stages. The inherent high voltage and high frequency capability of SiC makes this project relevant and timely. In the Phase I, a nearly-ideal blocking voltage SiC Thyristor with improved Gate-Anode design was found to offer the best solution for the challenging requirements. Extensive analytical and 2D device simulations were conducted to accurately model SiC FPS Thyristor devices and their performance was verified. Important Gate-Anode structures were fabricated in a commercial semiconductor foundry to demonstrate critical technology that enable the realization of these high voltage SiC devices. Low inductance power packaging technology was explored that allows reliable packaging of up to 28 kV devices. In Phase II SBIR program, five batches of SiC FPS Thyristor devices will be designed and fabricated with successively increasing voltage and current capabilities to meet the program objectives. A high volume Silicon Carbide foundry will allow economical production of SiC FPS Thyristors for successful commercialization with partners. A comprehensive test plan meeting military standards will be implemented.