High Temperature Silicon Carbide (SiC) Gate Driver

Period of Performance: 11/24/2010 - 05/24/2011

$70K

Phase 1 SBIR

Recipient Firm

Arkansas Power Electronics International
535 W. Research Center Blvd., Suite 209
Fayetteville, AR 72701
Principal Investigator

Abstract

The objective of this proposal is to develop and commercialize a high temperature gate driver for silicon carbide (SiC) FET switches to enable the development of the next generation of high-efficiency, high-power-density power converters. At the conclusion of Phase I, Arkansas Power Electronics International, Inc. (APEI, Inc.) will design and fabricate a high temperature (250 °C) gate driver utilizing discrete SiC circuitry and high temperature silicon-on-insulator (HTSOI) ASICs with off chip planar magnetic isolation. These designs will then be transitioned into an all SiC IC process in Phase II. APEI, Inc. has already developed a discrete HTSOI/SiC based gate driver which will meet most of the electrical needs of this program. This Phase I will focus on enhancing the features of APEI, Inc. s gate driver technology, and provide a development path for implementing the technology in an all SiC IC. APEI, Inc. will commercialize the full gate driver (ICs, transformers, packaging, etc.) into military platforms through our prime defense partners at the conclusion of Phase II.