High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications

Period of Performance: 06/01/2010 - 04/15/2011

$99K

Phase 1 SBIR

Recipient Firm

Discovery Semiconductors, Inc.
Nj
Ewing, NJ 08628
Principal Investigator

Abstract

We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor