Indium Gallium Nitride (InGaN) Solar Cell

Period of Performance: 06/25/2010 - 06/24/2011

$734K

Phase 2 SBIR

Recipient Firm

Cermet, Inc.
1019 Collier Road, Suite C1
Atlanta, GA 30318
Principal Investigator

Abstract

Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.