Novel HEMT based on GaN on Diamond for High Power Amplifiers

Period of Performance: 08/14/2009 - 08/14/2011


Phase 2 SBIR

Recipient Firm

Nitronex Corp.
2305 Presidential Drive
Durham, NC 27703
Principal Investigator


The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro