Advanced Development for Defense Science and Technology

Period of Performance: 05/01/2009 - 01/30/2010


Phase 1 SBIR

Recipient Firm

Versatilis LLC
488 Ridgefield Rd
Shelburne, VT 05482
Principal Investigator


This SBIR Phase I project will show a novel architecture for silicon Thin Film (TFT) Field Effect Transistors (FETs), with a novel technology for manufacturing such FETs on wires. Arranged or woven into structured, flexible active matrix (AM TFT) arrays, they can enable a wide variety of applications; e.g. large area backplanes for next generation, low power flexible displays, or embedded into structural elements for prognostic monitoring. A simple 128 x 128 AM TFT demonstrator array will be built, with TFTs fully characterized to show polysilicon mobilities >30 cm2/Vs, and array flexibility to 0.5 in. bend radius in 2D, surpassing the general state-of-the-art in electron mobility for flexible AM TFT backplanes. Display backplanes, for example, are presently low mobility (